Laser Vacancy Trapping in Diamond Crystal Lattice

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Solution Overview

Problem

Existing methods for creating nitrogen-vacancy (NV) centers in diamond crystals, such as ion implantation and electron irradiation, result in excessive lattice damage and limited control over the location and depth of vacancy creation, making it difficult to achieve properties similar to those formed during crystal growth and preventing the creation of isolated NV centers deep inside the crystal.

Innovation Solution

A method involving laser processing to modify the crystal lattice by creating vacancies through nonlinear multi-photon absorption, followed by annealing to capture these vacancies by trapping elements, allowing for precise control over the creation of NV centers and other defects within the crystal lattice, with the ability to engineer lattice strain for optimizing defect properties.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If ion implantation or electron irradiation is used to create vacancies, then vacancies are generated in the crystal lattice, but excessive lattice damage occurs and control over vacancy location and depth is limited

Engineering Contradiction:

Improvevacancy generationVSAvoidlattice damage

Core Design Contradiction:

Quantity of substanceVSObject-affected harmful factors

Solution Approach 1:

The patent replaces mechanical ion implantation and electron irradiation methods with a laser-based method. The laser modifies the crystal lattice through optical interaction, creating vacancies via nonlinear multi-photon absorption without the mechanical damage caused by particle bombardment. This substitution eliminates excessive lattice damage while maintaining vacancy generation capability.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the fundamental parameter of vacancy creation from particle-based mechanical interaction to light-based optical interaction. By using laser intensity and wavelength as controllable parameters, the method achieves precise spatial control over vacancy location and depth, eliminating the uncontrolled damage spread inherent in ion implantation and electron irradiation.

Inventive Principle:

Principle #35Parameter changes

2Quantity of substance

If ion implantation is used to create vacancies, then vacancies are formed, but control over the location and depth of vacancy creation is limited

Engineering Contradiction:

Improvevacancy formationVSAvoidvacancy location control

Core Design Contradiction:

Quantity of substanceVSManufacturing precision

Solution Approach 1:

The patent replaces the mechanical ion implantation process with optical laser modification. The laser beam can be precisely focused and scanned through the crystal lattice, allowing arbitrary 3D positioning of vacancy creation. This optical approach provides superior spatial control compared to the fixed penetration depth and spread characteristic of ion implantation.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent transitions from the limited depth control of ion implantation (primarily one-dimensional penetration) to three-dimensional spatial control using laser focusing and scanning. The laser can create vacancies at any position within the crystal volume by adjusting focus depth and lateral positioning, enabling precise control over vacancy location in all three spatial dimensions.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the precise creation of isolated NV centers and other defects at desired locations with minimal residual lattice damage, improving the control over defect formation and properties, and allowing for the fabrication of advanced devices like quantum sensors and quantum memory registers.

Implementation Method 1

modifying the crystal lattice at a controlled position in a target using a laser; modifying the crystal lattice within the target by using a laser to generate a lattice vacancy

Methodology Applied

Scientific EffectNonlinear multi-photon absorption:

Implementation Method 2

annealing the target to cause the lattice vacancy to migrate and be captured by a vacancy trapping element to form the trapped vacancy in the crystal lattice

Methodology Applied

Scientific EffectVacancy migration: Diffusion

Data Source

PatentUS10934635B2Method for trapping vacancies in a crystal lattice

Publication Date: 2021.03.02 OXFORD UNIVERSITY INNOVATION LTD

AI summary

There is provided a method of fabricating a trapped vacancy in a crystal lattice of a target comprising: positioning the target in a laser system, the target containing vacancy trapping elements within the crystal lattice; modifying the crystal lattice within the target by using a laser to generate a lattice vacancy; and annealing the target to cause the lattice vacancy to migrate and be captured by a vacancy trapping element to form the trapped vacancy in the crystal lattice.