Semiconductor Laser Wafer Cleavage with Pre-Etched Dividing Grooves
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Solution Overview
Problem
The existing method for manufacturing semiconductor laser devices is inefficient due to the high man-hours required for secondary scribing, which hampers the ability to produce devices quickly without compromising quality.
Innovation Solution
A method involving the formation of device dividing grooves by etching on the wafer before primary cleavage, eliminating the need for secondary scribing and reducing the risk of cracks by positioning grooves outside the device region, thereby reducing man-hours and maintaining manufacturing quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If secondary scribing is performed on each laser bar using a diamond tool, then the device dividing groove is formed for secondary cleavage, but the manufacturing process requires many man-hours and is time-consuming
Solution Approach 1:
The device dividing groove is formed in advance on the semiconductor wafer before primary cleavage separates the laser bars. This preliminary formation of the groove eliminates the need for time-consuming secondary scribing on each individual laser bar, as the groove is already prepared and will guide the secondary cleavage automatically when the laser bars are separated
Solution Approach 2:
The formation of the device dividing groove is merged with the primary cleavage process. Instead of performing groove formation and then primary cleavage as separate operations on each laser bar, the groove is formed once on the entire wafer before primary cleavage, combining multiple operations into a single efficient process step
2Manufacturing precision
If diamond scribing is performed to form the device dividing groove, then the groove is created for secondary cleavage, but deep damage layers are generated and wafer strength is compromised
Solution Approach 1:
The mechanical diamond scribing process is replaced with a non-contact method such as laser scribing or etching. This substitution eliminates the mechanical contact that causes deep damage layers and strength degradation, while still achieving the necessary groove formation for subsequent secondary cleavage
Solution Approach 2:
The method of groove formation is changed from mechanical (diamond tool) to optical or chemical (laser or etching). This parameter change in the formation process fundamentally alters the damage profile, creating minimal damage layers that preserve wafer strength while maintaining the functional integrity of the device dividing groove
3Manufacturing precision
If the device dividing groove is formed on the cleavage line, then the secondary cleavage can be performed, but cracks may occur in the laser bar
Solution Approach 1:
The device dividing groove is positioned specifically in the non-device region adjacent to the cleavage line, rather than directly on the cleavage line itself. This local positioning strategy allows the groove to serve its function of guiding secondary cleavage while avoiding the creation of stress concentrations that would cause cracks in the active device region
Solution Approach 2:
The non-device region acts as an intermediary zone between the device region and the cleavage line. By placing the device dividing groove in this intermediary non-device region, the groove serves as a mediator that guides the cleavage process without directly compromising the structural integrity of the device portion, thus preventing cracks
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces man-hours in the manufacturing process while ensuring the quality of semiconductor laser devices by avoiding deep damage layers and crack formation, allowing for efficient and accurate cleavage without compromising the mechanical strength of the wafer.
Implementation Method 1
forming a device dividing groove by etching on a first primary surface on a side of the wafer on which the semiconductor layer is positioned with respect to the substrate layer or a second primary surface opposite to the first primary surface
Implementation Method 2
obtaining a plurality of laser bars including a plurality of device portions arrayed one-dimensionally in the second direction by cleaving the wafer along the cleavage line
Data Source
AI summary
A method for manufacturing a semiconductor laser device of an embodiment includes a first step of preparing a wafer, a second step of forming a device dividing groove by etching, a third step of forming a cleavage introducing groove at a position overlapping a cleavage line, a fourth step of obtaining a plurality of laser bars by cleaving the wafer along the cleavage line, and a fifth step of cleaving each of the plurality of laser bars along the device dividing line. In the second step, the device dividing groove is not formed on the cleavage line. In the third step, the cleavage introducing groove is formed only outside a device region, or a length of a portion of the cleavage introducing groove included outside the device region is longer than a length of a portion of the cleavage introducing groove included inside the device region.