Laser-Splittable Wafer Structure for Thinner Low-Waste Layer Separation
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Solution Overview
Problem
Existing methods for laser splitting materials, such as semiconductor wafers, result in excess material waste, higher costs, and thicker split layers due to inefficiencies in laser ablation processes.
Innovation Solution
A laser-splittable structure comprising layers with distinct laser ablation thresholds, where a first layer has a higher threshold and subsequent layers have progressively lower thresholds, allowing precise control of laser energy absorption and splitting.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of substance
If conventional laser splitting methods are used on semiconductor wafers, then the material can be divided into layers, but excessive material waste occurs and production costs increase
Solution Approach 1:
The patent modifies the laser ablation threshold parameter by introducing a sacrificial layer with distinctly different material properties (lower ablation threshold) between the semiconductor layers. This parameter change enables selective removal of the sacrificial layer while preserving the semiconductor material, thereby reducing material waste and improving split layer quality.
Solution Approach 2:
The sacrificial layer acts as an intermediary element between the semiconductor layers to be separated. This intermediary layer facilitates the splitting process by providing a designated removal path that prevents direct damage to the semiconductor material, thus reducing waste and improving reliability.
2Manufacturing precision
If conventional laser splitting is applied, then layers can be separated, but the split layers end up too thick and manufacturing time increases
Solution Approach 1:
By changing the material composition parameter of the sacrificial layer to have a lower laser ablation threshold, the patent enables precise control over the splitting depth. The laser selectively removes only the sacrificial layer at controlled thickness, achieving thinner and more precise split layers without requiring excessive manufacturing time.
Solution Approach 2:
The sacrificial layer is pre-positioned at the desired split location before the actual separation process. This preliminary action defines the exact splitting plane in advance, allowing the laser to precisely remove material only where needed, thereby achieving thinner split layers and reducing unnecessary manufacturing time.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces material waste, lowers production costs, and achieves thinner, more reliable split layers by optimizing laser energy utilization.
Implementation Method 1
a first layer characterized by a first laser ablation threshold, and a second layer characterized by a second laser ablation threshold that is less than the first laser ablation threshold
Data Source
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AI summary
A laser-splittable structures (for example, semiconductor wafers), methods for making a laser-splittable structure, systems for laser splitting a structure, and methods for laser splitting a structure. As non-limiting examples, various aspects of this disclosure provide laser-splittable semiconductor wafers, laser-splittable structures (for example, semiconductor wafers), methods for making a laser-splittable structure, systems for laser splitting a structure, and methods for laser splitting a structure, where the laser-splittable structure comprises a first layer characterized by a first laser ablation threshold, and a second layer characterized by a second laser ablation threshold that is less than the first laser ablation threshold.