Laser-Welded Atom Trap Substrates for Scalable Quantum Assembly
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Solution Overview
Problem
Existing methods for producing atom trap apparatuses face challenges such as low production yield, high financial and time costs, material limitations, thermal management issues, and potential contamination from dicing processes, which affect coherence times and gate fidelities.
Innovation Solution
A method involving laser beam welding is used to bond substrates for an atom trap apparatus, allowing for high-precision, scalable, and modular assembly with minimal heat impact, enabling the use of diverse materials and facilitating substrate replacement and upgrade.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If anodic wafer bonding is used to bond stacked wafers, then bonding strength is achieved, but material selection is limited and thermal management is challenging
Solution Approach 1:
The patent segments the bonding process into two distinct stages: first bonding the atom trap chip to a temporary carrier substrate using anodic bonding, then transferring the assembled unit to a final package substrate. This segmentation allows each bonding interface to be optimized independently - the first interface uses anodic bonding for strong mechanical attachment, while the second interface can accommodate different material requirements for thermal management and electrical performance.
Solution Approach 2:
The patent introduces a temporary carrier substrate as an intermediary component between the atom trap chip and the final package substrate. This intermediary enables the decoupling of bonding requirements from material selection constraints, allowing the use of diverse materials in the final assembly while maintaining the benefits of anodic bonding for the critical atom trap attachment.
2Ease of manufacture
If wafer saw dicing is used for singulation, then substrate separation is achieved, but contamination occurs affecting coherence times and gate fidelities
Solution Approach 1:
The patent replaces the mechanical dicing process with a chemical bonding and release mechanism. Instead of using mechanical sawing that generates contamination, the substrates are bonded together and then selectively released through controlled debonding. This substitution eliminates the harmful mechanical cutting process while achieving the same substrate separation function, thereby preventing contamination and preserving quantum coherence.
3Device complexity
If monolithic integration approach is used, then device integration is achieved, but production yield decreases and manufacturing complexity increases
Solution Approach 1:
The patent segments the device fabrication into separate modules: the atom trap chip is fabricated independently on one wafer, while the package substrate is fabricated separately on another wafer. These modules are then bonded together in a second-stage assembly process. This segmentation allows each module to be optimized and manufactured independently using standard processes, improving yield while achieving the required device integration through the bonding interface.
4Strength
If high temperatures and high voltages are applied during anodic bonding, then bonding strength is achieved, but electrically sensitive components may be damaged
Solution Approach 1:
The patent performs the anodic bonding operation on the atom trap chip while it is still attached to the temporary carrier substrate, before mounting any electrically sensitive components. The high temperature and voltage bonding process is completed in advance, and only then are the sensitive components added to the assembly. This preliminary action ensures that the harsh bonding conditions do not damage the sensitive components, while still achieving strong bonding at the critical atom trap interface.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a reliable, high-quality, and scalable atom trap apparatus with improved coherence times and gate fidelities, supporting various materials and components, and enabling integration of diverse functionalities.
Implementation Method 1
Bonding the first substrate and the second substrate comprises forming at least one joint by means of laser beam welding
Data Source
Figure 1a~1c
Figure 1d~1h
Figure 2a~2c
AI summary
The present disclosure relates to a method (200) of producing an atom trap apparatus and to an atom trap apparatus. The atom trap apparatus comprises a first substrate (2) and a second substrate (3). The method comprises providing (210) a first substrate (2) comprising a main surface and providing (220) a second substrate (3) comprising a main surface. The method comprises arranging (230) the first substrate (2) and the second substrate (3) with respect to each other. The method comprises bonding (240) the first substrate (2) and the second substrate (3). Bonding (240) the first substrate (2) and the second substrate (3) comprises forming at least one joint (20) by means of laser beam welding. The atom trap apparatus comprises at least one atom trap (50) located above the main surface of the first substrate (2) and/or located above the main surface of the second substrate (3).