Ultrathin Laser Welding Electronic Component Electrode
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Solution Overview
Problem
Conventional techniques for bonding electrode films and leads in electronic components on ultrathin insulating substrates fail to adequately address thermal responsiveness, size reduction, tensile strength, and heat resistance, often causing thermal damage to the substrate and requiring complex processes for high-density mounting.
Innovation Solution
An electronic component configuration featuring a high melting point active layer, a barrier layer, and a low melting point bonding layer, with a bonding electrode part thickness of 1 μm or less, allowing for efficient tensile strength and heat resistance improvements without substrate damage, and enabling high-density, reliable mounting through laser welding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If soldering is used for bonding leads to electrode films, then bonding is achieved, but operating temperature is limited to 150°C or less and thickness cannot be reduced
Solution Approach 1:
The patent changes the bonding method from soldering to laser welding, fundamentally altering the bonding parameters. Laser welding enables operation at temperatures exceeding 150°C and achieves bonding thickness of 1 μm or less, simultaneously resolving both the temperature limitation and thickness reduction requirements.
2Strength
If conductive paste is used for bonding, then bonding is achieved, but tensile strength is insufficient and glass sealing reinforcement is required
Solution Approach 1:
The patent replaces the mechanical bonding method (conductive paste with glass sealing) with laser welding. This substitution achieves high tensile strength through direct metal-to-metal bonding without requiring additional glass sealing reinforcement, thereby reducing structural complexity while improving strength.
3Temperature
If plating layer or bump layer is added for laser welding, then heat resistance is improved, but size and thickness increase
Solution Approach 1:
The patent employs an ultrathin insulating substrate with thickness of 100 μm or less as the bonding electrode part. This thin film structure achieves high heat resistance through laser welding while maintaining minimal size and thickness, eliminating the need for bulky plating layers or bump structures.
4Speed
If ultrathin insulating substrate is used, then thermal responsiveness is improved, but tensile strength and heat resistance are compromised
Solution Approach 1:
The patent utilizes laser welding parameters to achieve high-energy-density bonding that penetrates through the ultrathin insulating substrate. This parameter change enables the thin substrate (100 μm or less) to maintain both high thermal responsiveness and sufficient tensile strength and heat resistance through precise control of the bonding process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances thermal responsiveness, tensile strength, and reliability by reducing the bonding electrode part thickness, eliminating the need for glass reinforcement, and allowing for high heat resistance and simplified assembly processes.
Implementation Method 1
a welding part of the bonding layer is melted by irradiation of a laser beam, so that the lead and the bonding electrode part are bonded to each other
Implementation Method 2
the lead and the bonding electrode part are diffusion-bonded
Data Source
AI summary
The present invention enables the achievement of: high density mounting by means of an electronic component for welding; and improvement of thermal responsivity and tensile strength at high temperatures by means of reduction in size and thickness of a temperature sensor. An electronic component for welding, which has a function of a resistor, a capacitor, an inductor or the like, comprises: an insulating substrate; a function part and a bonding electrode part, which are provided on the insulating substrate; and a lead which is electrically connected to the bonding electrode part. The bonding electrode part is configured of: an adhesive active metal layer which is formed from a high-melting-point metal on the insulating substrate; a barrier layer which is formed from a high-melting-point metal on the active metal layer; and a bonding metal layer which is mainly composed of a low-melting-point metal and is formed on the barrier layer.


