Latch Circuit Gate-Width Layout for Lower Delay and Reliability
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The miniaturization of integrated circuits has led to stricter design and manufacturing specifications, as well as reliability challenges, which existing technologies have not adequately addressed.
Innovation Solution
The integration of transistors with different gate widths in various active-region structures, specifically using wide transistors in wide active-region structures and narrow transistors in narrow active-region structures, to reduce time delay in master-slave flip-flops and data latches.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If transistors are miniaturized to reduce device size, then device area is reduced, but time delay increases and reliability deteriorates
Solution Approach 1:
The patent applies local quality by using wide transistors specifically in the forward data path (first inverter, first transmission gate, second inverter) while using narrow transistors in other areas (clocked inverters, output driver). This localized differentiation optimizes signal propagation speed where needed most without unnecessarily increasing area elsewhere, thus reducing time delay while maintaining compact device area.
2Area of moving object
If transistors are miniaturized to reduce device size, then device area is reduced, but reliability deteriorates
Solution Approach 1:
The patent enhances reliability locally by placing wide transistors in critical signal path positions where signal integrity is most important (forward data path inverters and transmission gate). This localized quality enhancement ensures robust signal transmission in key areas while maintaining overall device miniaturization.
3Loss of time
If wide transistors are used in forward data path, then time delay is reduced, but device area increases
Solution Approach 1:
The patent minimizes area impact by confining wide transistors only to the forward data path components (first inverter, first transmission gate, second inverter) rather than using them throughout the entire circuit. Narrow transistors are used in non-critical areas like clocked inverters and output driver, thus achieving time delay reduction with minimal area penalty.
Solution Approach 2:
The patent segments the circuit into different functional zones with different transistor width requirements: the forward data path uses wide transistors for speed optimization, while other areas use narrow transistors for area efficiency. This segmentation allows independent optimization of each zone's characteristics.
Data Source
AI summary
An integrated circuit includes a first inverter and a first transmission gate constructed with wide type-one transistors and wide type-two transistors. The integrated circuit also includes a first clocked inverter constructed with narrow type-one transistors and narrow type-two transistors. A latch is formed with the first inverter and the first clocked inverter. The first transmission gate is connected to between an output of the first inverter. The wide type-one transistors are formed in a wide type-one active-region structure and the narrow type-one transistors are formed in a narrow type-one active-region structure. The wide type-two transistors are formed in a wide type-two active-region structure and the narrow type-two transistors are formed in in a narrow type-two active-region structure.