Lateral Bipolar Transistor on Semiconductor Fin for FinFET Integration
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Solution Overview
Problem
Conventional bipolar transistors face challenges in integration with field effect transistors due to distinct processing requirements, leading to higher costs and operational constraints, particularly in achieving optimal electrical behavior and efficient integration within micro-device structures.
Innovation Solution
A bipolar transistor structure is designed with a doped semiconductor layer and semiconductor fins of specific doping types, where the emitter/collector material has an opposite doping type, allowing for integration with FinFETs and other devices on a shared substrate, enabling efficient processing and reduced surface area requirements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional bipolar transistors are integrated with field effect transistors using distinct processing methods, then the electrical performance of each transistor type can be optimized, but the manufacturing complexity and cost increase
Solution Approach 1:
The patent implements a universal FinFET-based structure that can function as either a bipolar transistor or a field effect transistor depending on the doping configuration. By using the same FinFET processing methodology for both transistor types and only changing the doping types and concentrations, the patent achieves multi-functionality from a single structure, thereby reducing manufacturing complexity while maintaining electrical performance
Solution Approach 2:
The patent changes the doping parameters (doping type and concentration) of the FinFET structure to transform it between bipolar and field effect transistor functionality. Specifically, by adjusting the doping type of the emitter/collector material and the base material, the same physical structure can operate as different transistor types, eliminating the need for distinct processing methods
2Adaptability or versatility
If lateral bipolar transistors are integrated into desired locations, then design flexibility is improved, but significant process accommodations and additional processing steps are required
Solution Approach 1:
The FinFET structure serves as a universal platform that can be configured as lateral bipolar transistors or other transistor types without requiring separate processing lines. The same epitaxial growth, doping, and fabrication steps are used, with only the doping parameters varying to achieve different device functions, thereby improving ease of manufacture while maintaining design flexibility
Solution Approach 2:
Instead of creating specialized processing lines for lateral bipolar transistors, the patent inverts the approach by using standard FinFET processing to create bipolar functionality. This reversal eliminates the need for significant process accommodations while achieving the desired design flexibility through parameter adjustment rather than structural modification
3Reliability
If conventional bipolar transistor structures are used, then electrical performance is maintained, but the horizontal width and surface area increase
Solution Approach 1:
The patent transitions from planar bipolar transistor structures to a vertical FinFET structure, utilizing the third dimension (vertical height of the fin) to achieve the necessary electrical performance. This dimensional change allows the bipolar transistor functionality to be achieved with a smaller horizontal footprint, as the active volume is extended vertically through the fin structure rather than laterally
Data Source
AI summary
Embodiments of the disclosure provide a lateral bipolar transistor on a semiconductor fin and methods to form the same. A bipolar transistor structure according to the disclosure may include a doped semiconductor layer coupled to a base contact. A first semiconductor fin on the doped semiconductor layer may have a first doping type. An emitter/collector (E/C) material may be on a sidewall of an upper portion of the first semiconductor fin. The E/C material has a second doping type opposite the first doping type. The E/C material is coupled to an E/C contact.