Lateral Bipolar Junction Transistors With Interdigitated Emitter-Collector Arrays
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Solution Overview
Problem
Lateral bipolar junction transistors fabricated using CMOS compatible process technologies have limitations in current-driving capability due to restricted emitter-base junction areas, which affect their performance in high-frequency and high-current applications.
Innovation Solution
The design of lateral bipolar junction transistors with a common base region and alternately arrayed emitter and collector regions in diagonal directions increases the number of current paths and reduces the emitter-base junction area, enhancing current-driving capability by incorporating island-shaped regions with varying impurity concentrations and junction depths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If lateral bipolar junction transistors are fabricated using CMOS compatible process technologies, then manufacturing compatibility and integration are improved, but current-driving capability deteriorates due to restricted emitter-base junction areas
Solution Approach 1:
The transistor structure is segmented into multiple emitter regions and multiple collector regions arranged in an interdigitated pattern within the common base region. This segmentation increases the total emitter-base junction area while maintaining CMOS process compatibility, thereby improving current-driving capability without sacrificing manufacturing ease
Solution Approach 2:
The patent transitions from a conventional single-emitter/single-collector planar structure to a multi-regional interdigitated structure that utilizes both lateral and vertical dimensions more effectively. The alternating arrangement of emitter and collector regions in diagonal directions creates additional current paths and increases the effective junction area within the same footprint
2Reliability
If traditional bipolar junction transistor structures are used, then current-driving capability is maintained, but emitter-base junction area is restricted in lateral configurations
Solution Approach 1:
Multiple emitter regions and multiple collector regions are merged into a single transistor structure sharing a common base region. This merging approach increases the total emitter-base junction area and provides multiple parallel current paths, enhancing current-driving capability while maintaining a compact lateral configuration
Data Source
AI summary
A bipolar junction transistor includes a common base region, a plurality of emitter regions disposed in the common base region and arrayed to be spaced apart from each other in a first diagonal direction, and a plurality of collector regions disposed in the common base region and arrayed to be spaced apart from each other in the first diagonal direction. The plurality of emitter regions and the plurality of collector regions are alternately arrayed in a second diagonal direction.