Lateral Bipolar Junction Transistor Device With Shared Metallization
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Solution Overview
Problem
Current technologies face challenges in enhancing the operating speed and electrical performance of bipolar junction transistor (BJT) devices, particularly in BiCMOS technology applications, where efficient formation of BJT devices and CMOS transistors is necessary for system-on-a-chip (SoC) products.
Innovation Solution
The development of a lateral bipolar junction transistor (BJT) device with a semiconductor substrate, including a collector region, base region, emitter region, and a field effect transistor, along with conductive contact structures that contact the base, collector, and emitter regions, using materials that are the same for conductive contact and source/drain metallization structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional BJT device structures are used, then manufacturing processes are simpler, but operating speed and electrical performance are limited
Solution Approach 1:
The patent transitions from a conventional vertical BJT structure to a lateral BJT structure, changing the spatial dimension of current flow. This dimensional change enables improved operating speed and electrical performance while maintaining compatibility with standard CMOS fabrication processes, thus resolving the contradiction between speed improvement and device complexity
2Ease of manufacture
If separate materials are used for conductive contact structures and source/drain metallization structures, then electrical performance may be optimized, but manufacturing complexity and process steps increase
Solution Approach 1:
The patent employs the same material for both conductive contact structures and source/drain metallization structures, allowing a single material deposition process to serve multiple functions. This universal material approach simplifies manufacturing while maintaining reliable electrical performance, effectively resolving the contradiction between ease of manufacture and electrical performance
Data Source
AI summary
One illustrative device disclosed herein includes a semiconductor substrate and a bipolar junction transistor (BJT) device that comprises a collector region, a base region and an emitter region. In this example, the device also includes a field effect transistor and at least one base conductive contact structure that conductively and physically contacts the base region.