3D Lateral Channel Semiconductor Device for High Density Integration
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Solution Overview
Problem
Current 3D semiconductor devices with vertical pillar structures face challenges in manufacturing complexity and structural instability due to high aspect ratios, and the process of aligning channels and gates can lead to misalignment defects, limiting the integration density and stability of memory cells.
Innovation Solution
A semiconductor device with a 3D lateral channel structure is developed, featuring a line-shaped common source node electrically coupled to the source region, which reduces alignment complexity and aspect ratio, using a semiconductor substrate with insulating layers, active lines, and gate electrodes, allowing for improved integration density and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a vertical pillar structure is used for 3D semiconductor devices, then integration density is improved, but manufacturing complexity increases and structural stability deteriorates due to high aspect ratio
Solution Approach 1:
The patent inverts the conventional vertical channel structure by implementing a lateral channel structure where the channel extends horizontally between source and drain regions rather than vertically. This inversion reduces the aspect ratio from high vertical pillars to low lateral structures, thereby simplifying manufacturing processes while maintaining 3D integration density through stacked memory cell arrangements.
2Quantity of substance
If a vertical pillar structure is used for 3D semiconductor devices, then integration density is improved, but structural stability deteriorates due to high aspect ratio
Solution Approach 1:
The patent inverts the conventional vertical channel structure by implementing a lateral channel structure where the channel extends horizontally between source and drain regions rather than vertically. This inversion reduces the aspect ratio from high vertical pillars to low lateral structures, thereby simplifying manufacturing processes while maintaining 3D integration density through stacked memory cell arrangements.
3Reliability
If alignment processes are used to position channels and gates, then device functionality is achieved, but misalignment defects increase due to process complexity
Solution Approach 1:
The patent merges the channel and gate structures into a self-aligned configuration where the lateral channel is inherently positioned relative to the gate electrode through the stacking sequence of deposited layers. This self-alignment eliminates the need for separate alignment processes, thereby reducing misalignment defects while maintaining device functionality.
4Reliability
If lateral fin structure is electrically coupled to semiconductor substrate through common source node, then electrical connectivity is achieved, but alignment processes increase device complexity
Solution Approach 1:
The patent merges the channel and gate structures into a self-aligned configuration where the lateral channel is inherently positioned relative to the gate electrode through the stacking sequence of deposited layers. This self-alignment eliminates the need for separate alignment processes, thereby reducing misalignment defects while maintaining device functionality.
Data Source
AI summary
A 3D semiconductor device and a method of manufacturing the same are provided. The 3D semiconductor device includes a semiconductor substrate, an active line formed on the insulating layer, including a source region, a drain region and a channel region positioned between the source region and the drain region, a gate electrode located on a portion of the active line, corresponding to a region between the source region and the drain region, and extending to a direction substantially perpendicular to the active line, and a line-shaped common source node formed to be electrically coupled to the source region and extending substantially in parallel to the gate electrode in a space between gate electrodes. The source region and the drain region of the active line are formed of a first material and the channel region of the active line is formed of a second material being different from the first material.