Lateral Charge Transfer in Semiconductor Imaging Layers
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Solution Overview
Problem
In imaging apparatuses using photoelectric conversion films, charge transfer efficiency is low due to defects and potential barriers, leading to reduced sensitivity and increased noise, especially for long-wavelength light.
Innovation Solution
The imaging apparatus employs a semiconductor layer with a substrate-based pixel circuit configuration, utilizing lateral charge transfer along interfaces with low defect levels, such as between the semiconductor and insulating layers, to efficiently move charge from the light receiving region to the charge discharging region, thereby reducing noise and improving sensitivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If charge is transferred vertically to the upper electrode in a photoelectric conversion film, then charge can be collected, but transfer efficiency is low due to defects and potential barriers
Solution Approach 1:
The patent changes the charge transfer direction from vertical (perpendicular to substrate) to lateral (parallel to substrate surface). This dimensional change allows charge to move along the interface between semiconductor layer and insulating layer, avoiding defects and potential barriers present in the vertical path, thereby improving charge transfer efficiency especially for long-wavelength light
2Measurement precision
If photoelectric conversion film is used, then light detection is achieved, but sensitivity for long-wavelength light is reduced due to inefficient charge transfer
Solution Approach 1:
By transitioning from vertical to lateral charge transfer along the semiconductor-insulating layer interface, the patent improves charge collection efficiency for long-wavelength light, thereby enhancing sensitivity without sacrificing measurement precision
3Object-generated harmful factors
If conventional photoelectric conversion structure is used, then imaging function is achieved, but noise and image lag increase due to residual charge
Solution Approach 1:
The lateral charge transfer mechanism along the interface enables more complete charge collection, reducing residual charge that would otherwise cause noise and image lag, thereby improving image quality
Solution Approach 2:
The interface between the semiconductor layer and insulating layer serves as an intermediary pathway for charge transfer. This interface acts as a low-defect region that mediates charge movement from the light receiving region to the charge discharging region, reducing noise and improving signal quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables high-speed and efficient charge transfer, reducing noise and image lag caused by residual charge, while maintaining sensitivity for long-wavelength light.
Implementation Method 1
a photoelectric conversion film is disposed on a semiconductor substrate
Implementation Method 2
charge transfer efficiency is low due to defects and potential barriers, leading to reduced sensitivity and increased noise
Data Source
AI summary
An imaging apparatus according to the present invention includes a substrate including a plurality of pixel circuits arranged thereon and a semiconductor layer disposed on the substrate. Each of the plurality of pixel circuits includes an amplification transistor configured to output a signal based on charge generated in the semiconductor layer. The charge generated in the semiconductor layer is transferred in a first direction parallel to a surface of the substrate.