Lateral Electron Blocking Layer for Electro-Optical Devices
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Solution Overview
Problem
In electro-optical devices with lateral current injection, such as silicon photonics chips, there is a challenge in achieving high hole injection efficiency due to low hole mobility and parasitic leakage currents, which limits the output power and performance.
Innovation Solution
A lateral current injection electro-optical device is designed with a tapered active region and a lateral electron blocking layer (EBL) that extends between the p-doped layer and the substrate, preventing electron leakage and enhancing output power by optimizing the angle and thickness of the EBL for effective electron blocking.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If lateral current injection is used to simplify device structure, then device complexity is reduced, but parasitic leakage currents increase and hole injection efficiency decreases
Solution Approach 1:
An electron blocking layer is introduced as an intermediary component between the active region and the p-doped layer. This layer specifically blocks parasitic electron leakage currents while maintaining hole injection efficiency, thereby resolving the contradiction between simplified lateral current injection structure and reliable device performance
Solution Approach 2:
The electron blocking layer is strategically positioned only in regions where electron leakage occurs (at the interfaces between the active region and p-doped layer, and between the p-doped layer and substrate), allowing local optimization of current blocking properties without affecting the overall lateral current injection mechanism
2Device complexity
If lateral current injection is used to simplify device structure, then device complexity is reduced, but output power is limited due to parasitic leakage
Solution Approach 1:
The electron blocking layer acts as a mediator that eliminates parasitic electron leakage paths, thereby increasing the proportion of useful current that contributes to light generation and output power, while maintaining the simplicity of the lateral current injection structure
Solution Approach 2:
The invention converts the harmful effect of parasitic electron leakage into a beneficial outcome by introducing the electron blocking layer, which transforms the leakage current into useful current that contributes to output power, effectively turning the weakness of lateral current injection into a strength
3Reliability
If electron blocking layer is added to prevent electron leakage, then hole injection efficiency is improved, but device complexity increases
Solution Approach 1:
The electron blocking layer is implemented as a thin film layer in the vertical dimension rather than a bulky three-dimensional structure. This allows effective electron blocking while minimizing the additional device complexity, as the layer can be integrated into the existing vertical stacking of the lateral current injection device
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of a tapered active region and an electron blocking layer improves hole injection efficiency, reduces parasitic leakage currents, and increases the output power of the electro-optical devices by preventing electron leakage from the n-side to the p-side.
Implementation Method 1
an electron blocking layer that extends both at a first interface between the p-doped layer and the substrate and a second interface between the tapered active region and the p-doped layer
Implementation Method 2
The active region may be tapered so as to widen toward the substrate
Data Source
AI summary
A device may include a substrate and an active region. This active region may include a stack of semiconductor gain materials stacked along a stacking direction. The latter may extend substantially perpendicular to a plane of the substrate. The active region may be furthermore tapered so as to widen toward the substrate. In addition, the device may include a pair of doped layers semiconductor materials, the pair may include an n-doped layer and a p-doped layer arranged on the substrate and on opposite. The doped layers may be arranged on the substrate and on opposite, lateral sides of the tapered active region, respectively. The device may include an electron blocking layer, which may extend both at a first interface, between a p-doped layer and the substrate, and at a second interface, between the tapered active region and the p-doped layer, along a lateral side of the tapered active region.