Lateral Emitter Filter Air Gap Infrared Device

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Solution Overview

Problem

Existing infrared emitters face challenges with high power consumption and device degradation due to high temperatures, which are not effectively addressed by current technologies.

Innovation Solution

A semiconductor device with a lateral emitter structure and a lateral filter structure separated by an air gap, where the emitter structure emits infrared light with a broad frequency distribution that is filtered to produce frequency-adjusted light with a narrower range, improving thermal insulation and reducing current requirements.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If a thermal emitter is used to generate infrared light, then infrared light can be emitted, but high power consumption and device degradation occur due to high temperatures

Engineering Contradiction:

Improvepower consumptionVSAvoiddevice degradation

Core Design Contradiction:

Use of energy by moving objectVSReliability

Solution Approach 1:

The device is divided into functionally independent modules: a heater module for generating heat, an emitter module for converting heat to infrared light, and a filter module for selecting specific frequencies. This segmentation allows each module to operate at optimized temperatures, reducing overall power consumption and preventing device degradation.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

A thermal isolation layer is introduced as an intermediary between the heater and surrounding components. This layer acts as a thermal mediator that directs heat flow to the emitter while blocking heat transfer to adjacent structures, enabling efficient infrared generation without overheating surrounding components.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Temperature

If the emitter structure is heated to desired temperature, then infrared light is emitted, but surrounding components are heated causing device degradation

Engineering Contradiction:

Improveemitter temperatureVSAvoidheat transfer to surrounding components

Core Design Contradiction:

TemperatureVSObject-affected harmful factors

Solution Approach 1:

A thermal isolation layer is positioned between the emitter and surrounding components to act as a thermal mediator. This layer has low thermal conductivity that blocks heat flow to adjacent structures while allowing the emitter to reach its required operating temperature for efficient infrared light emission.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The thermal isolation layer is strategically positioned only where heat transfer to surrounding components is problematic. This localized thermal management approach maintains high emitter temperature for optimal performance while preventing overheating of specific vulnerable components.

Inventive Principle:

Principle #3Local quality

3Manufacturing precision

If a lateral filter structure is added to filter infrared light, then frequency-adjusted light is provided, but device complexity increases

Engineering Contradiction:

Improvefrequency distribution controlVSAvoidstructure complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The filter structure is merged with the emitter structure to form an integrated emitter-filter assembly. The filter is positioned in close proximity to the emitter and shares common support structures and alignment mechanisms, reducing the number of separate components and simplifying manufacturing while maintaining precise frequency control.

Inventive Principle:

Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution reduces power consumption and minimizes device degradation by lowering the current needed to achieve desired temperatures and reduces heat transfer to surrounding components.

Implementation Method 1

The lateral emitter structure is configured to be heated by a current flow through the lateral emitter structure

Methodology Applied

Scientific EffectJoule heating: Joule Heating

Implementation Method 2

The lateral emitter structure is configured to emit infrared light

Methodology Applied

Scientific EffectThermal radiation: Thermal Radiation

Implementation Method 3

Due to the air gap between the lateral emitter structure and the lateral filter structure, the thermal insulation of the lateral emitter structure can be improved

Methodology Applied

Scientific EffectThermal insulation: Thermal Insulation

Implementation Method 4

the lateral filter structure is configured to filter the infrared light emitted by the lateral emitter structure so that frequency-adjusted infrared light is provided with an adjusted frequency distribution

Methodology Applied

Scientific EffectOptical filtering: Filter (optical)

Data Source

PatentUS9570659B2Semiconductor device for emitting frequency-adjusted infrared light

Publication Date: 2017.02.14 INFINEON TECHNOLOGIES AG

AI summary

A semiconductor device for emitting frequency-adjusted infrared light includes a lateral emitter structure and a lateral filter structure. The lateral emitter structure is configured to emit infrared light with an emitter frequency distribution. Further, the lateral filter structure is configured to filter the infrared light emitted by the lateral emitter structure so that frequency-adjusted infrared light is provided with an adjusted frequency distribution. The frequency range of the adjusted frequency distribution is narrower than a frequency range of the emitter frequency distribution. Further, a lateral air gap is located between the lateral emitter structure and the lateral filter structure.