Lateral-flow Deposition Substrate Rotation for Film Uniformity
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Solution Overview
Problem
Lateral-flow atomic layer deposition reactors face non-uniformity issues in thin film deposition due to rapid gas flow and increased thickness at the gas inlet compared to the outlet, necessitating improved methods to enhance film uniformity and productivity.
Innovation Solution
A lateral-flow deposition apparatus and method where the substrate is rotated during deposition, changing the process gas flow direction relative to the substrate center, combined with a substrate support system that includes a heater and pin structure to manage gas flow and prevent foreign substances from entering the reaction chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If lateral-flow deposition is used to increase deposition rate and productivity, then productivity is improved, but film uniformity deteriorates due to non-uniform gas flow distribution
Solution Approach 1:
The substrate support is made rotatable to dynamically change the gas flow direction relative to the substrate surface. By rotating the substrate during deposition, the system averages out the non-uniform gas flow distribution, achieving both high deposition rates and uniform film thickness. This dynamic adjustment allows the system to maintain productivity while improving uniformity.
Solution Approach 2:
The substrate undergoes periodic rotation during the deposition process, creating cyclic changes in gas flow exposure across different substrate regions. This periodic motion ensures that all areas of the substrate receive equivalent average exposure to the gas flow over time, resolving the uniformity issue while maintaining the high deposition rates characteristic of lateral-flow deposition.
2Loss of time
If gas flow rate is increased to reduce process time, then process time is reduced, but film uniformity deteriorates due to enhanced non-uniformity in gas distribution
Solution Approach 1:
By making the substrate support rotatable, the system can compensate for the non-uniform gas flow distribution that occurs at higher flow rates. The rotation dynamically redistributes the gas flow exposure across the substrate surface, allowing high deposition rates to be achieved without sacrificing film uniformity.
3Manufacturing precision
If substrate rotation is added to the deposition apparatus, then film uniformity is improved, but device complexity increases
Solution Approach 1:
The substrate support structure serves multiple functions: it holds the substrate in place, provides heating capability, and enables rotation. By integrating these functions into a single multi-functional component, the system achieves improved film uniformity through rotation without proportionally increasing device complexity. The same structural element that supports the substrate also enables the rotational motion needed for uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach achieves improved thin film uniformity by adjusting gas flow distribution and reducing process time, while preventing contamination and enhancing film quality by integrating substrate rotation within the deposition process.
Implementation Method 1
a substrate support heater disposed under the substrate support, transferring heat to the substrate support
Implementation Method 2
a process gas flows between a surface where a substrate is disposed and the opposite surface, substantially in parallel with the substrate
Implementation Method 3
the substrate is rotated during deposition, changing the process gas flow direction relative to the substrate center
Data Source
AI summary
A deposition apparatus according to an exemplary embodiment of the present invention is a lateral-flow deposition apparatus in which in which a process gas flows between a surface where a substrate is disposed and the opposite surface, substantially in parallel with the substrate. The lateral-flow deposition apparatus includes: a substrate support that moves up/down and rotates the substrate while supporting the substrate; a reactor cover that defines a reaction chamber by contacting the substrate support; and a substrate support lifter and a substrate support rotator that move the substrate support.