Lateral Gap Fill with Cyclic ALD Inhibition
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Solution Overview
Problem
Challenges exist in depositing high-quality dielectric films in semiconductor gaps, particularly in features with narrow openings, high aspect ratios, and re-entrant structures, leading to voids and seams.
Innovation Solution
Performing inhibition operations during atomic layer deposition (ALD) to modify the surface of gaps, using either thermal or plasma-based inhibition processes, to inhibit growth in subsequent cycles, ensuring uniform and void-free fill.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional ALD deposition is performed in gaps with narrow openings and high aspect ratios, then dielectric material can be deposited, but voids and seams form in the films
Solution Approach 1:
A liner layer is deposited beforehand in the gaps before the main dielectric fill process. This preliminary liner layer modifies the gap surface properties and enables subsequent complete fill without voids or seams by controlling the deposition behavior in challenging geometries
Solution Approach 2:
The patent employs cyclic inhibition operations that temporarily modify deposition parameters during the ALD process. By periodically inhibiting deposition on certain surfaces while allowing it in gaps, the process achieves uniform fill in high aspect ratio structures without forming defects
2Manufacturing precision
If inhibition operations are performed to prevent void formation, then uniform fill is achieved, but process complexity increases
Solution Approach 1:
The inhibition operation is performed periodically during the ALD deposition process rather than continuously. This periodic inhibition allows dielectric material to fill gaps uniformly while preventing excessive deposition elsewhere, achieving complete gap fill through controlled cyclic operations
Solution Approach 2:
The inhibition operation automatically adjusts deposition based on the gap geometry and fill status. The process self-regulates to provide exactly the right amount of material in the gaps without requiring complex external control mechanisms
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Achieves uniform top-to-bottom and feature-to-feature fill of dielectric materials in challenging gap structures, preventing void formation and seam effects.
Implementation Method 1
providing a halogen-containing gas to the chamber under non-plasma conditions to inhibit deposition on at least part of the feature
Implementation Method 2
performing one or more atomic layer deposition cycles to deposit a dielectric material in the feature
Implementation Method 3
providing a plasma generated from a nitrogen-containing halogen-free gas to the chamber to inhibit deposition on at least part of the feature, wherein the chamber pressure is at least 5 Torr during (a)
Implementation Method 4
performing one or more atomic layer deposition cycles to deposit a dielectric material in the feature
Data Source
AI summary
Inhibition of dielectric film growth is described. The inhibition may be used during atomic layer deposition (ALD) processes of dielectric material in gaps to facilitate bottom-up (or inside-out) gap fill. One or more inhibition operations are performed during gap fill. The inhibition operation modifies the surface of the gap in a manner that inhibits growth in subsequent ALD cycles.