Lateral Gate Transistor Layout for Tunneling Oxide Reliability
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Solution Overview
Problem
The stacked configuration of gates in semiconductor structures can lead to increased stress and deterioration of the dielectric structure and tunneling oxide, causing shorting and other failures due to high gate heights and stress on the tunneling oxide during transistor operations.
Innovation Solution
A semiconductor structure with a lateral configuration of gates, where the gates have relatively low heights, reducing the stress on the dielectric structure and tunneling oxide, and allowing operations based on voltage differences across the dielectric structure instead of the tunneling oxide, thereby enhancing the structure's reliability and deposition processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a stacked configuration of gates is used to increase device density, then device density is improved, but stress on the tunneling oxide increases causing deterioration and shorting
Solution Approach 1:
The patent transitions from a vertical stacked gate configuration to a lateral gate configuration, changing the spatial arrangement from height-based stacking to side-by-side positioning. This dimensional change eliminates the need for tall gate structures while maintaining device functionality and reducing stress on the tunneling oxide layer.
Solution Approach 2:
Instead of stacking gates vertically to achieve higher density, the patent inverts the approach by arranging gates laterally and using multiple tiers of transistors. This inversion of the conventional stacking paradigm resolves the stress issue while achieving density through alternative spatial organization.
2Power
If gate height is increased to improve transistor performance, then transistor performance is improved, but stress on the tunneling oxide increases causing deterioration
Solution Approach 1:
The patent achieves improved transistor performance without increasing gate height by utilizing lateral gate extension and multi-tier transistor arrangements. This allows sufficient gate-to-channel interaction for good performance while keeping the gate structure low-profile and free from excessive stress on the tunneling oxide.
3Reliability
If a lateral configuration of gates is used to reduce stress on dielectric structure, then dielectric structure reliability is improved, but device density decreases
Solution Approach 1:
The patent implements a multi-tier transistor structure where transistors are arranged in multiple levels or tiers, with upper tiers positioned over lower tiers. This nesting approach allows high device density to be achieved through vertical layering of transistor tiers rather than through increased gate height, thereby maintaining both reliability and density.
Solution Approach 2:
By transitioning to lateral gate configuration combined with multi-tier transistor stacking, the patent achieves density through horizontal and tiered spatial organization rather than vertical gate extension, thus maintaining dielectric reliability while achieving high device density.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The lateral configuration of gates reduces the likelihood of dielectric structure deterioration and shorting, increases the life cycle of the semiconductor structure, and simplifies deposition processes by aligning gate heights with single-layer devices, improving device density and reducing power consumption.
Implementation Method 1
a first portion of a tunneling layer formed on the substrate... a second portion of the tunneling layer formed on the substrate
Implementation Method 2
a dielectric structure formed on a top surface and side surfaces of the first conductive structure... disposed between a side surface of the second conductive structure and a first side surface of the first conductive structure
Data Source
AI summary
Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first terminal coupled to a substrate of the semiconductor structure, with the first terminal including a first portion of a tunneling layer formed on the substrate, and a first gate formed on the first portion of the tunneling layer. The semiconductor structure includes a second terminal coupled to the substrate and adjacent to the first terminal, with the second terminal including a second portion of the tunneling layer formed on the substrate, a second gate formed on the second portion of the tunneling layer, and a dielectric structure formed on a top surface and side surfaces of the second gate. The semiconductor structure includes a third terminal coupled to an insulating structure and adjacent to the second terminal, with the third terminal including, a third gate formed on the insulating structure.