Lateral Oxidized Intervention Layer for Capacitive Coupling
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Solution Overview
Problem
The scaling down of semiconductor devices poses challenges in achieving improved quality, yield, performance, and reliability while reducing complexity, particularly in achieving effective capacitive coupling between control and memory units.
Innovation Solution
A semiconductor device design featuring a substrate with a memory unit conductive layer and a lateral oxidized intervention layer, where the sidewall portion has a higher oxygen concentration than the center portion, enhancing capacitive coupling through the use of a tunneling insulating layer and a control unit positioned below the oxidized intervention layer, and a method for fabricating this device involving a lateral oxidation process at temperatures between 300° C and 600° C with controlled oxygen partial pressure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the dimensions of semiconductor devices are scaled down, then computing ability is improved, but capacitive coupling between control and memory units deteriorates
Solution Approach 1:
The patent applies local quality by creating a lateral oxidized intervention layer with non-uniform oxygen concentration distribution. The sidewall portions have higher oxygen concentration than the center portion, resulting in different dielectric constants in different regions. This local variation in dielectric properties enhances capacitive coupling specifically where needed between the control unit and memory unit, while maintaining the scaled-down device dimensions.
Solution Approach 2:
The patent changes the dielectric parameter of the intervention layer by controlling oxygen concentration. Through lateral oxidation processing at specific temperatures (300-600°C) with controlled oxygen partial pressure, the dielectric constant of the intervention layer is optimized to enhance capacitive coupling. This parameter change allows effective coupling despite the reduced device dimensions.
2Productivity
If device dimensions are reduced, then integration density is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs preliminary action by forming the lateral oxidized intervention layer before final device assembly and operation. The oxidation process is performed at controlled temperatures (300-600°C) with specific oxygen partial pressures to pre-establish the desired oxygen concentration profile. This preliminary oxidation step ensures precise control over the dielectric properties before subsequent manufacturing steps, reducing the need for later adjustments.
Solution Approach 2:
The patent replaces mechanical precision requirements with chemical process control. Instead of relying solely on mechanical alignment and physical dimension control, the invention uses lateral oxidation chemistry to create the desired oxygen concentration profile. The oxidation process naturally produces the required non-uniform distribution through diffusion mechanisms, substituting complex mechanical precision requirements with more controllable chemical parameters.
3Ease of manufacture
If device complexity is reduced, then ease of manufacture is improved, but performance enhancement capabilities are limited
Solution Approach 1:
The patent achieves performance enhancement through parameter changes in the intervention layer rather than adding complex structural elements. By adjusting oxygen concentration and dielectric constant through controlled lateral oxidation, the device maintains structural simplicity while improving capacitive coupling performance. The performance boost comes from optimizing material properties rather than increasing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The increased dielectric constant of the lateral oxidized intervention layer improves capacitive coupling between the control and memory units, thereby enhancing the performance of the semiconductor device.
Implementation Method 1
a lateral oxidized intervention layer positioned between the memory unit conductive layer and the control unit... The lateral oxidized intervention layer include a sidewall portion and a center portion, and the sidewall portion has a greater concentration of oxygen than the center portion
Implementation Method 2
the handle portion comprises the memory unit conductive layer and a tunneling insulating layer positioned between the memory unit conductive layer and the substrate
Data Source
AI summary
The present application discloses a semiconductor device with an oxidized intervention layer and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a memory unit including a memory unit conductive layer positioned above the substrate and a lateral oxidized intervention layer positioned below the memory unit conductive layer, and a control unit positioned in the substrate and below the lateral oxidized intervention layer. The lateral oxidized intervention layer includes a sidewall portion and a center portion, and the sidewall portion has a greater concentration of oxygen than the center portion.