Lateral P-N Junction Black Phosphorus Thin Film
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Solution Overview
Problem
Black phosphorus-based transistors face limitations in charge mobility due to the formation of vertical hetero-junctions between p-type and n-type semiconductor materials, leading to decreased performance.
Innovation Solution
A lateral p-n junction black phosphorus thin film is created by modifying the surface of a black phosphorus thin film using a diazirine compound through light irradiation, converting p-type semiconductor regions into n-type semiconductor regions, thereby forming a homo-junction that maintains high charge mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If vertical hetero-junctions are formed between p-type and n-type semiconductor materials to create black phosphorus-based transistors, then the transistor structure is established, but charge mobility decreases
Solution Approach 1:
The patent transitions from vertical hetero-junction architecture to lateral p-n junction architecture within the same plane. By forming p-type and n-type regions side-by-side in the black phosphorus thin film rather than stacking them vertically, the invention maintains material homogeneity while achieving junction functionality, thereby preserving charge mobility without sacrificing transistor manufacturability
Solution Approach 2:
The patent uses the same black phosphorus material for both p-type and n-type regions, creating a homo-junction rather than a hetero-junction. This homogeneity eliminates the charge mobility degradation caused by material interfaces while maintaining the ability to form functional p-n junctions through lateral doping variations in the thin film structure
2Reliability
If black phosphorus is used as a two-dimensional semiconductor material, then excellent charge mobility is achieved, but control of electrical conductivity is limited due to lack of band gap
Solution Approach 1:
The patent applies local quality by creating spatially distinct p-type and n-type doped regions within the black phosphorus thin film. Through selective chemical doping in different areas, the invention generates localized variations in carrier type and concentration, enabling electrical conductivity control at specific locations while preserving the overall high charge mobility of the undoped black phosphorus regions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively prevents the decrease in charge mobility associated with vertical junctions, enhancing electrical conductivity and mobility in semiconductor devices such as diodes, transistors, and solar cells.
Implementation Method 1
modifying the surface of a black phosphorus thin film using a diazirine compound through light irradiation
Data Source
Figure 1A~2
Figure 3(a)~3(d)
Figure 4
AI summary
Provided are a lateral p-n junction black phosphorus thin film, and a method of manufacturing the same, and specifically, a lateral p-n junction black phosphorus thin film in which a p-type black phosphorus thin film having a p-type semiconductor property and a n-type black phosphorus thin film having a n-type semiconductor property form a lateral junction by modifying some regions on a surface of the black phosphorus thin film through light irradiation with a compound having a specific chemical structure, and a method of manufacturing the same.