Lateral RRAM Structure for Smaller Critical Dimensions
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Solution Overview
Problem
The development of resistance random access memory (RRAM) faces challenges in reducing the critical dimension, which is essential for improving storage density and operational speed.
Innovation Solution
A semiconductor device with a lateral type RRAM structure is designed, featuring a resistive switching film between electrodes, where the electrodes and metal layers are arranged perpendicular to each other, allowing for reduced via counts and simplified manufacturing, enabling adjustable critical dimensions and faster operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional vertical RRAM structure is used, then the device can achieve basic data storage functionality, but the critical dimension cannot be reduced sufficiently, limiting storage density improvement
Solution Approach 1:
The patent transitions from a conventional vertical RRAM structure to a lateral RRAM structure where the resistive switching film is positioned horizontally between electrodes. This dimensional change allows the critical dimension to be defined by the thinner resistive switching film layer rather than a deeper vertical trench, enabling reduced critical dimensions and improved storage density while maintaining data storage functionality
2Productivity
If the critical dimension is reduced to improve storage density, then more memory cells can be packed, but the via count increases and manufacturing complexity increases
Solution Approach 1:
By adopting a lateral structure where the resistive switching film extends horizontally between electrodes rather than vertically, the patent eliminates the need for deep vias to access the switching element. The electrodes can be formed using standard planar processing techniques, significantly reducing via count and manufacturing complexity while enabling higher storage density through reduced critical dimensions
3Productivity
If the critical dimension is reduced to improve storage density, then more memory cells can be packed, but manufacturing costs increase
Solution Approach 1:
The lateral RRAM structure allows the use of standard semiconductor manufacturing processes for forming electrodes and isolating devices, avoiding the need for complex deep-trench etching and via formation processes. This dimensional reconfiguration enables reduced critical dimensions with conventional manufacturing tools, thereby improving storage density while controlling manufacturing costs
Data Source
AI summary
A semiconductor device and a method for forming the same are provided. The semiconductor device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a first electrode, a second electrode on one side of the first electrode, and a resistive switching film between the first electrode and the second electrode. The first electrode, the resistive switching film and the second electrode are arranged along the first direction. The second semiconductor structure includes a first via and a first metal layer on the first via along a second direction and electrically connected to the first via. The first direction is perpendicular to the second direction. An upper surface of the first electrode, an upper surface of the second electrode, an upper surface of the resistive switching film and an upper surface of the first metal layer are coplanar.