Lateral High-Breakdown Voltage Semiconductor Switching Device
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Solution Overview
Problem
Conventional switched mode power supply apparatuses face challenges in reducing losses across the entire range from light load to heavy load due to the limitations of using either MOSFET or IGBT as switching devices, as MOSFETs incur high conducting losses at heavy loads and IGBTs experience increased switching losses at light loads.
Innovation Solution
A lateral high-breakdown voltage semiconductor switching device that can switch between MOSFET and IGBT operations, utilizing a resurf region with high impurity concentration to reduce conducting resistance and a unique collector/drain region structure to facilitate easy mode transition without increasing element area, allowing for efficient operation across the entire load range.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If resurf region with high impurity concentration is used, then conducting resistance is reduced, but element area increases
Solution Approach 1:
The patent applies local quality by creating a resurf region with high impurity concentration only in specific areas where it is most beneficial for reducing conducting resistance, rather than uniformly increasing impurity concentration across the entire device. This localized approach reduces conducting loss while minimizing the increase in element area.
Data Source
AI summary
A high-breakdown voltage semiconductor switching device includes a resurf region of a second conductivity type; a base region of a first conductivity type formed to be adjacent to the resurf region; an emitter/source region of the second conductivity type formed in the base region to be spaced from the resurf region; a gate electrode formed to cover a portion of the emitter/source region and a portion of the resurf region; a drain region of the second conductivity type formed in the resurf region to be spaced from the base region; and a collector region of the first conductivity type formed in the resurf region to be spaced from the base region. Furthermore, it includes an electrode connected to the collector region and the drain region and an electrode connected to the base region and the emitter/source region.