Lateral SOI Component Reducing On Resistance
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Solution Overview
Problem
Semiconductor components face a trade-off between achieving high dielectric strength in the off-state and low on-resistance in the on-state, with existing measures often detrimental to one parameter when optimizing the other.
Innovation Solution
The SOI semiconductor component incorporates a semiconductor substrate with a dielectric layer, a drift zone, and field zones doped complementarily with respect to the substrate, along with a rectifier element and field plates to manage the electric field and doping levels, allowing for increased doping of the drift zone without compromising dielectric strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If field zones are provided in the substrate beneath the insulation layer to influence field distribution, then dielectric strength is improved, but device complexity increases
Solution Approach 1:
The invention merges the field zone functionality directly into the drift zone structure by providing field zones that are integrated with the drift zone in the semiconductor layer. This integration eliminates the need for separate field zones in the substrate, reducing device complexity while maintaining the field distribution control necessary for high dielectric strength
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables a semiconductor component with enhanced dielectric strength and reduced on-resistance, as the field zones compensate for dopant charge and the rectifier element supports accumulation channel formation, optimizing both parameters simultaneously.
Implementation Method 1
when the component is driven in the off state, a space charge zone propagates in the semiconductor substrate as well as in the drift zone along the insulation layer
Implementation Method 2
When the component is driven in the on state, the gate extension brings about the formation of an accumulation channel in the drift zone along the dielectric layer and thus brings about a reduction of the on resistance
Data Source
AI summary
An SOI semiconductor component comprises a semiconductor substrate having a basic doping, a dielectric layer arranged on the semiconductor substrate, and a semiconductor layer arranged on the dielectric layer. The semiconductor layer includes a drift zone of a first conduction type, a junction between the drift zone and a further component zone which is configured in such a way that a space charge zone is formed in the drift zone when a reverse voltage is applied to the junction, and a terminal zone adjacent to the drift zone. A first terminal electrode is connected to the further component zone, and a second terminal electrode is connected to the terminal zone. In the semiconductor substrate a first semiconductor zone is doped complementarily with respect to a basic doping of the semiconductor substrate, and the first terminal electrode is connected to the first semiconductor zone. A rectifier element is connected between the first terminal electrode and the first semiconductor zone.