Lateral Transistor Gate Layout to Reduce Dielectric Stress
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Solution Overview
Problem
The stacked configuration of gates in semiconductor structures leads to increased stress and deterioration of the dielectric structure due to high height, causing shorting and other failures, and the stress on tunneling oxide material during transistor operations.
Innovation Solution
Implementing a lateral configuration of gates with relatively low heights and increased thickness of the dielectric structure to reduce stress on the tunneling oxide, thereby minimizing the likelihood of shorting and improving deposition processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a stacked configuration of gates is used in semiconductor structures, then the device can achieve high-density storage and multiple operations, but the dielectric structure experiences increased stress and deterioration due to high height, causing shorting and failures
Solution Approach 1:
The patent transitions from a vertical stacked gate configuration to a lateral gate configuration, changing the spatial arrangement from three-dimensional stacking to two-dimensional lateral placement. This dimensional change reduces the height of the gate structure, thereby decreasing the stress on the dielectric structure and preventing shorting while maintaining device functionality.
Solution Approach 2:
The patent extracts the gate structure from the stacked configuration and repositions it laterally. By separating the gate from the vertical stacking arrangement, the design eliminates the excessive height that causes dielectric stress, while still achieving the necessary electrical control and storage functions through the lateral arrangement of multiple gates.
2Adaptability or versatility
If a stacked configuration of gates is used, then multiple operations can be performed, but the tunneling oxide material experiences stress during transistor operations leading to deterioration
Solution Approach 1:
The patent repositions the gate structure from a vertical stacked arrangement to a lateral configuration. This spatial reorganization reduces the mechanical stress on the tunneling oxide material, preventing deterioration while preserving the material's essential function in enabling multiple transistor operations through voltage control.
3Quantity of substance
If gates are configured with high height in stacked arrangement, then device density is increased, but deposition processes become more difficult and less reliable
Solution Approach 1:
The patent changes the gate configuration from vertical stacking to lateral arrangement, reducing the overall height of the structure. This dimensional change simplifies deposition processes by reducing the travel distance for deposited materials, improving manufacturing reliability while maintaining high device density through the lateral arrangement of multiple gates.
Data Source
AI summary
Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first terminal coupled to a substrate of the semiconductor structure, with the first terminal including a first portion of a tunneling layer formed on the substrate, and a first gate formed on the first portion of the tunneling layer. The semiconductor structure includes a second terminal coupled to the substrate and adjacent to the first terminal, with the second terminal including a second portion of the tunneling layer formed on the substrate, a second gate formed on the second portion of the tunneling layer, and a dielectric structure formed on a top surface and side surfaces of the second gate. The semiconductor structure includes a third terminal coupled to an insulating structure and adjacent to the second terminal, with the third terminal including, a third gate formed on the insulating structure.