All-Lateral WBG Cascode Switch Layout for Faster, Reliable Switching

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Solution Overview

Problem

The switching frequency and reliability of GaN cascode switching devices are limited by component and packaging architectures, making it difficult to improve them significantly to meet various application requirements.

Innovation Solution

An all-lateral WBG cascode switch device is developed, utilizing a lateral depletion-mode WBG semiconductor switch and a lateral enhancement-mode silicon semiconductor switch with the same vertical orientation, enhancing switching frequency and reliability while offering more flexible and versatile assembly and packaging architectures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional GaN cascode switching devices are used, then the device can operate in power switching systems with voltages between 600 and 900 volts, but the switching frequency and reliability are limited by component and packaging architectures

Engineering Contradiction:

Improveswitching frequency and reliabilityVSAvoidcomponent and packaging architectures

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The invention divides the cascode switching device into two separate lateral semiconductor switches (first lateral semiconductor switch and second lateral semiconductor switch) with different orientations. This segmentation allows each switch to be optimized independently for high switching frequency and reliability while simplifying the overall packaging architecture, as each lateral switch can be packaged separately rather than requiring complex integrated packaging for vertical structures

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The invention transitions from conventional vertical-oriented semiconductor switches to lateral-oriented switches. By changing the orientation dimension from vertical to lateral, the device achieves improved switching frequency and reliability while enabling simpler packaging architectures, as lateral switches can be mounted and connected in planar configurations rather than requiring complex vertical stacking

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

2Productivity

If conventional GaN cascode switching devices are used, then the device structure is established, but it is difficult to significantly improve switching frequency and reliability due to limitations in component and packaging architectures

Engineering Contradiction:

Improveswitching frequencyVSAvoidpackaging architecture flexibility

Core Design Contradiction:

ProductivityVSAdaptability or versatility

Solution Approach 1:

The invention creates a universal packaging architecture that can accommodate different lateral semiconductor switch configurations. The first and second lateral switches with different orientations can be packaged using the same general approach, providing versatility for various applications while achieving high switching frequency. This universal approach eliminates the need for application-specific custom packaging designs

Inventive Principle:

Principle #6Universality (Multi-functionality)

3Reliability

If lateral depletion-mode WBG semiconductor switch and lateral enhancement-mode silicon semiconductor switch with same vertical orientation are used, then switching frequency and reliability are improved, but assembly and packaging require careful alignment

Engineering Contradiction:

Improveswitching reliabilityVSAvoidassembly alignment

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The invention positions both lateral semiconductor switches to face the same direction (same vertical orientation), creating an equipotential assembly configuration. This alignment approach simplifies the manufacturing process by establishing a common reference direction for both switches, making assembly and packaging more straightforward while maintaining improved reliability benefits from the lateral structure

Inventive Principle:

Principle #12Equipotentiality

Data Source

PatentUS20250204033A1All-lateral wide band-gap cascode switch device

Publication Date: 2025.06.19 TAIWAN ASIA SEMICONDUCTOR CORPORATION

AI summary

An all-lateral wide band-gap (WBG) cascode switch device is provided, which includes a source terminal; a gate terminal; a drain terminal; a lateral enhancement-mode silicon semiconductor switch, having a first source electrode, a first drain electrode, and a first gate electrode; and a lateral depletion-mode WBG semiconductor switch disposed laterally apart from and cascoded with the lateral enhancement-mode silicon semiconductor switch, having a second source electrode, a second drain electrode, and a second gate electrode. The first source electrode, the first drain electrode, and the first gate electrode of the lateral enhancement-mode silicon semiconductor switch and the second source electrode, the second drain electrode and the second gate electrode of the lateral depletion-mode WBG semiconductor switch have the same vertical orientation to face the same side.