Laterally Coupled BAW Resonators for Higher Q and Power Handling

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Solution Overview

Problem

Conventional Bulk Acoustic Wave (BAW) resonators suffer from lateral modes that degrade the quality factor Q and reduce power handling due to energy loss and coupling to unwanted Rayleigh-Lamb waves, which are not confined to the piezoelectric layer and escape the resonant cavity.

Innovation Solution

The BAW device employs an acoustic coupling structure between adjacent resonators to utilize lateral traveling waves for synchronized operation, enhancing power handling by engineering the coupling strength and synchronicity of BAW resonators through a mechanically and acoustically coupled system.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If conventional BAW resonators are used with thin piezoelectric layers and reflective elements, then the device structure is simple and easy to manufacture, but lateral Rayleigh-Lamb modes are triggered that escape the resonant cavity, causing energy loss and reducing the quality factor Q

Engineering Contradiction:
Improveease of manufactureVSAvoidquality factor Q
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent converts the harmful lateral Rayleigh-Lamb modes into beneficial acoustic coupling mechanisms. By intentionally designing acoustic coupling structures that utilize lateral wave propagation, the previously harmful energy loss pathways are transformed into controlled coupling channels between adjacent resonators, enabling synchronized operation and improved power handling while maintaining manufacturing simplicity

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The patent introduces acoustic coupling structures as intermediary elements between adjacent BAW resonators. These structures mediate the interaction between resonators by controlling lateral wave propagation, enabling mechanical and acoustic coupling that synchronizes resonator operation and improves overall device performance without requiring fundamental changes to the basic resonator structure

Inventive Principle:
Principle #24Intermediary (Mediator)

2Device complexity

If lateral modes are allowed to propagate freely in conventional BAW resonators, then the device complexity remains low, but energy is lost through cavity escape, reducing power handling capability

Engineering Contradiction:
Improvedevice complexityVSAvoidpower handling
Core Design Contradiction:
Device complexityVSPower

Solution Approach 1:

The patent transforms the previously harmful lateral mode energy loss into a beneficial coupling mechanism. By designing acoustic coupling structures that guide lateral wave propagation, the energy that would otherwise escape and reduce power handling is now utilized to create synchronized mechanical coupling between resonators, enhancing power handling capability while maintaining low device complexity

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The patent introduces dynamic coupling between resonators through acoustic coupling structures. The coupling strength and synchronicity are engineered to be可调 (adjustable) through the design of the coupling structures, allowing the system to adaptively optimize power handling performance based on operating conditions while maintaining structural simplicity

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The acoustic coupling structure improves power handling by ensuring in-phase current generation across the coupled system, thereby increasing the quality factor Q and reducing energy loss.

Implementation Method 1

a piezoelectric layer configured to propagate a BAW; a first bottom electrode and a second bottom electrode provided beneath the piezoelectric layer, respectively; a first top electrode and a second top electrode provided on the piezoelectric layer, respectively, wherein the first top electrode and the first bottom electrode sandwich the piezoelectric layer

Methodology Applied
Scientific EffectPiezoelectric effect: Piezoelectric Effect

Implementation Method 2

an acoustic coupling structure arranged between the first top electrode and the second top electrode on the piezoelectric layer, wherein the acoustic coupling structure is configured to allow an acoustic wave to propagate from the first resonator region into the second resonator region through the acoustic coupling structure

Methodology Applied
Scientific EffectAcoustic wave propagation: Sound

Implementation Method 3

The acoustic coupling structure improves power handling by ensuring in-phase current generation across the coupled system, thereby increasing the quality factor Q and reducing energy loss

Methodology Applied
Scientific EffectPiezoelectric effect (reverse): Converse Piezoelectric Effect

Data Source

PatentEP4059137B1Bulk acoustic wave device with laterally acoustically coupled resonators
Publication Date: 2026.03.11 HUAWEI TECH CO LTD
  • EP4059137B1 patent drawingFigure 1
  • EP4059137B1 patent drawingFigure 2
  • EP4059137B1 patent drawingFigure 3

AI summary

The present invention relates to acoustic wave devices, in particular to Bulk Acoustic Wave (BAW) devices and their fabrication method. The invention proposes a BAW device comprising at least a first BAW resonator and a second BAW resonator, which are acoustically coupled by using an acoustic coupling structure. In particular, the BAW device comprises a piezoelectric layer configured to propagate a BAW, a first bottom electrode and a second bottom electrode provided beneath the piezoelectric layer, respectively, and a first top electrode and a second top electrode provided on the piezoelectric layer, respectively. The first top electrode and the first bottom electrode sandwich the piezoelectric layer to form a first BAW resonator, the first BAW resonator comprising a first resonator region, which is a region of the piezoelectric layer located between the first top electrode and the first bottom electrode. The second top electrode and the second bottom electrode sandwich the piezoelectric layer to form a second BAW resonator, the second BAW resonator comprising a second resonator region, which is a region of the piezoelectric layer located between the second top electrode and the second bottom electrode. The BAW device further comprises an acoustic coupling structure arranged between the first top electrode and the second top electrode on the piezoelectric layer. The acoustic coupling structure is configured to allow an acoustic wave to propagate from the first resonator region into the second resonator region through the acoustic coupling structure. An optimization of lateral traveling waves enables an acoustic coupling of adjacent BAW resonators operating in their fundamental thickness-extensional (TE) mode or in a thickness-shear (TS) mode.