Laterally Grown Edge Emitting Laser Sidewall Integration
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current edge emitting laser manufacturing methods face challenges in integrating high-performance III-V semiconductor layers laterally on semiconductor substrates while maintaining efficient light confinement and electrical connectivity.
Innovation Solution
The method involves forming a semiconductor structure with a hard mask layer, etching to create a protruding sidewall, and sequentially growing III-V optical layers with different doping and materials, followed by cladding semiconductor layers and dielectric layers to form a laterally grown edge emitting laser with a double heterojunction structure for efficient light confinement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If III-V semiconductor layers are grown vertically from the substrate, then light emission and electrical connectivity are achieved, but integration with lateral semiconductor devices and waveguide confinement are difficult
Solution Approach 1:
The patent transitions from vertical growth (z-direction) to lateral growth along the sidewall (x-y plane), enabling integration with lateral semiconductor devices and simplified waveguide structure formation
Solution Approach 2:
The laser structure is divided into functionally distinct lateral layers: n-type cladding layer, active region, p-type cladding layer, each grown sequentially on the sidewall to achieve both integration and optical confinement
2Ease of manufacture
If lateral growth of III-V layers is implemented, then integration with MOSFETs and waveguide structure are simplified, but manufacturing precision and material quality control become more challenging
Solution Approach 1:
A semiconductor protrusion is formed beforehand on the substrate with a controlled sidewall, providing a pre-defined template for lateral growth that ensures precise layer positioning and uniform thickness
Solution Approach 2:
The growth parameters (temperature, pressure, gas flow, dopant concentration) are precisely controlled during lateral epitaxial growth to maintain material quality and doping uniformity despite the complex lateral geometry
3Reliability
If multiple doped layers are grown laterally, then light confinement and electrical injection are improved, but process complexity and doping uniformity control increase
Solution Approach 1:
Different doping concentrations and types are applied to different lateral regions: n-type doping in the lower cladding layer, undoped or lightly doped active region, and p-type doping in the upper cladding layer, with each layer optimized for its specific function
Solution Approach 2:
The lateral epitaxial growth process continuously deposits material and dopants in a single integrated process step, ensuring uniform doping distribution and continuous layer formation without interruption
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the integration of high-performance edge emitting lasers with efficient light confinement and electrical connectivity, enhancing the integration with MOSFETs and improving the laser's operational efficiency.
Implementation Method 1
a first, a second and a third III-V optical layers which are laterally and sequentially grown on and from a sidewall of the semiconductor structure
Implementation Method 2
Laser waveguide is formed using materials with different refractive indexes to confine the light
Data Source
AI summary
A laterally grown edge emitting laser is provided. A semiconductor structure is disposed on a substrate. A first, a second and a third III-V optical layers are sequentially and laterally grown on and from a sidewall of the semiconductor structure. A cladding semiconductor layer is disposed next to the third III-V optical layer and electrically connected to the III-V optical layer. Then, a first contact structure and a second contact structure is disposed on and electrically connected to the semiconductor structure and the cladding semiconductor layer, respectively. In the edge emitting laser, each of the first, second and third III-V optical layers may independently include a III-V semiconductor including at least one of group III elements of boron (B), gallium (Ga), aluminum (Al) and indium (In), and at least one of group V elements of nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb) and bismuth (Bi). The laterally grown edge emitting laser may be integrated with a metal-oxide-semiconductor field-effect transistor (MOSFET). A method for manufacturing the laterally grown edge emitting laser is also provided.