Lattice-Matched Passivation for Light-Emitting Active Layers
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Solution Overview
Problem
Current light-emitting elements face challenges in achieving high luminous efficiency due to surface defects and non-emissive recombination of electrons and holes.
Innovation Solution
A light-emitting element is designed with a passivation layer surrounding the active layer, using a semiconductor material that matches the lattice of the active layer material but has a higher band gap energy, thereby reducing surface defects and non-emissive recombination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional passivation layer is used to protect the active layer, then surface protection is improved, but surface defects and non-emissive recombination increase due to lattice mismatch
Solution Approach 1:
The patent changes the material parameters of the passivation layer by selecting a semiconductor material with a wider band gap than the active layer while maintaining lattice matching. This parameter change allows the passivation layer to provide effective surface protection while preventing non-emissive recombination through its higher band gap energy, thus resolving the contradiction between protection and energy loss.
Solution Approach 2:
The patent employs a composite structure where the passivation layer is formed from a semiconductor material that combines lattice matching with wider band gap properties. This composite approach creates a material system that simultaneously achieves both surface protection and suppression of non-emissive recombination, resolving the technical contradiction.
2Productivity
If the band gap energy of the passivation layer is increased to prevent non-emissive recombination, then luminous efficiency is improved, but material selection and manufacturing complexity increase
Solution Approach 1:
The patent systematically changes the band gap parameter of the passivation layer material to be wider than the active layer, which directly improves luminous efficiency by preventing non-emissive recombination. This parameter change is achieved through careful material selection that also considers lattice matching, balancing performance improvement with manufacturing feasibility.
3Manufacturing precision
If a passivation layer with lattice-matched semiconductor material is used, then surface defects are reduced, but the structure complexity increases
Solution Approach 1:
The patent changes the material composition parameters of the passivation layer to achieve lattice matching with the active layer while maintaining a simpler overall structure. By carefully selecting semiconductor materials with appropriate lattice constants and wider band gaps, the patent reduces surface defects without significantly increasing structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution enhances the emission efficiency of the light-emitting element by suppressing surface defects and preventing non-emissive recombination, leading to improved performance in display devices.
Implementation Method 1
the passivation layer may include a semiconductor material that matches a lattice of a semiconductor material contained in the active layer, the semiconductor material has a band gap energy higher than that of the semiconductor material contained in the active layer
Implementation Method 2
the passivation layer may include a semiconductor material that matches a lattice of a semiconductor material contained in the active layer
Data Source
AI summary
A light-emitting element includes a first semiconductor layer doped to a first conductivity type, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer, the second semiconductor layer doped to a second conductivity type, and a passivation layer surrounding surfaces of the active layer, the passivation layer including a side surface of the active layer, and the passivation layer includes a semiconductor material that matches a lattice of a semiconductor material contained in the active layer, the semiconductor material has a band gap energy higher than that of the semiconductor material contained in the active layer.