Layer Deposition Pretreatment for Uniform Nucleation Layers

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Solution Overview

Problem

The existing methods for forming layers on substrates in semiconductor device manufacturing lack the necessary uniformity and quality, particularly in the nucleation layer, which affects the subsequent deposition of layers.

Innovation Solution

A method and apparatus that involve sequentially repeating a deposition cycle with a pretreatment period longer than the pulse periods for the precursors, allowing byproducts to uniformly spread and prepare the surface for improved nucleation layer uniformity, comprising supplying a first precursor for a pulse period, removing it, then supplying a second precursor for another pulse period, and repeating this process with extended pretreatment to enhance layer uniformity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the deposition cycle is repeated sequentially without extended pretreatment, then the deposition process is faster, but the uniformity of the nucleation layer deteriorates

Engineering Contradiction:
Improvedeposition speedVSAvoidnucleation layer uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies preliminary action by extending the pretreatment period before the actual deposition cycles. During this extended pretreatment, byproducts are allowed to accumulate and uniformly distribute in the reaction chamber, preparing the environment for subsequent deposition. This preliminary preparation ensures uniform nucleation layer formation without compromising deposition productivity.

Inventive Principle:
Principle #10Preliminary action

2Manufacturing precision

If the pretreatment period is extended longer than pulse periods, then the uniformity of the nucleation layer is improved, but the total deposition time increases

Engineering Contradiction:
Improvenucleation layer uniformityVSAvoidtotal deposition time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The patent applies parameter changes by optimizing the duration of the pretreatment period relative to the pulse periods. By carefully controlling the pretreatment time to be longer than the pulse periods, the process achieves uniform byproduct distribution and improved nucleation layer uniformity while minimizing the overall time penalty. This parameter optimization balances quality improvement with time efficiency.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach improves the uniformity and quality of the deposited layers by ensuring better distribution of byproducts during the pretreatment period, leading to enhanced nucleation layer uniformity and overall layer quality, even when processing multiple substrates simultaneously.

Implementation Method 1

a silicon halide molecule may chemisorb on a surface site that has a hydroxyl group

Methodology Applied
Scientific EffectChemisorption: Chemisorption

Implementation Method 2

the substrate may be exposed to a pulse of a second precursor reactant, which chemically reacts with the adsorbed portion of the first precursor reactant molecules

Methodology Applied
Scientific EffectChemical reaction: Chemical Bonding

Implementation Method 3

the byproduct may be more uniformly spread through the reaction chamber

Methodology Applied
Scientific EffectDiffusion: Diffusion

Data Source

PatentUS11830730B2Layer forming method and apparatus
Publication Date: 2023.11.28 ASM IP HLDG BV
  • US11830730B2 patent drawing

AI summary

There is provided a method and apparatus for forming a layer, by sequentially repeating a layer deposition cycle to process a substrate disposed in a reaction chamber. The deposition cycle comprising:supplying a first precursor into the reaction chamber for a first pulse period;supplying a second precursor into the reaction chamber for a second pulse period. At least one of the first and second precursors may be supplied into the reaction chamber for a pretreatment period longer than the first or second pulse period before sequentially repeating the deposition cycles.