Semiconductor Layer Stack Passivation for Multi-Gate Channel Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The semiconductor industry faces challenges in manufacturing low-cost, high-performance, and low-power integrated circuits due to increased complexity from scaling down semiconductor IC dimensions, particularly in achieving effective gate control and reducing short-channel effects in multi-gate devices like FinFETs and GAA transistors.
Innovation Solution
A method is introduced to fabricate multi-gate devices, including nanowire or nanosheet, FinFET, and planar devices on a single substrate by designating specific regions for different device types, using a CMOS technology process flow, and employing epitaxial growth of alternating silicon germanium and silicon layers, followed by passivation and epitaxial liner layer formation to mitigate unwanted species diffusion and enhance device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multi-gate devices like FinFETs and GAA transistors are used to improve gate control and reduce short-channel effects, then device performance is improved, but manufacturing complexity increases
Solution Approach 1:
The substrate is divided into multiple designated regions, with each region configured for specific device types (FinFETs, GAA devices, or planar devices). This segmentation allows different device architectures to coexist on the same substrate, enabling improved gate control in specific areas while maintaining manufacturing efficiency through standardized regional processes.
Solution Approach 2:
Different regions of the substrate are assigned different device configurations and processing parameters tailored to local requirements. FinFET regions receive fin structure processing, GAA regions receive nanowire/nanosheet processing, while planar regions maintain conventional processing, allowing each local area to optimize for its specific device type's gate control needs.
2Manufacturing precision
If alternating silicon germanium and silicon layers are grown epitaxially to reduce unwanted species diffusion, then layer composition is improved, but process time and temperature requirements increase
Solution Approach 1:
The alternating silicon germanium and silicon layers are grown epitaxially in advance to create a structured barrier system before subsequent processing steps. This preliminary layer structure prevents unwanted species diffusion during later manufacturing steps, ensuring precise layer composition is maintained throughout the fabrication process.
Solution Approach 2:
Alternating layers of silicon germanium and silicon are grown to create a composite structure where each material contributes specific properties. The silicon germanium layers act as diffusion barriers while the silicon layers provide the desired electrical characteristics, achieving precise composition control through material combination rather than single-layer processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for improved composition of layers on the substrate, reducing unwanted species diffusion and enabling the formation of high-performance multi-gate devices with enhanced gate control and reduced short-channel effects, thereby addressing the complexity and performance requirements of advanced semiconductor manufacturing.
Implementation Method 1
reducing unwanted species diffusion
Implementation Method 2
employing epitaxial growth of alternating silicon germanium and silicon layers
Data Source
AI summary
Methods and associated devices including the fabrication of a semiconductor structure are described that include epitaxially growing a stack of layers alternating between a first composition and a second composition. The stack of layers extends across a first region and a second region of a semiconductor substrate. The stack of layers in the second region of the semiconductor substrate may be etched to form an opening. A passivation process is then performed that includes introducing chlorine to at least one surface of the opening. After performing the passivation process, an epitaxial liner layer is grown in the opening.