Semiconductor Layer Transfer With Ion-Etched Step Edges

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Solution Overview

Problem

Existing methods for transferring semiconductor layers from a source substrate to a destination substrate result in irregular and defective edges, which can propagate defects during subsequent microelectronic component manufacturing steps.

Innovation Solution

A method involving ion etching and surface activation under vacuum to create clean and regular edges by forming steps on the bonding surfaces of the substrates, followed by bonding without vacuum rupture, and optionally using a masking disk to ensure precise alignment.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional transfer methods are used, then the transfer process is simple, but the edges of the transferred layer become irregular and defective

Engineering Contradiction:

Improveedge quality of transferred layerVSAvoidcomplexity of transfer process

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The method applies preliminary actions by forming steps on the bonding surfaces before the actual transfer operation. These steps are created through ion etching to remove surface contaminants and oxides, and by depositing bonding materials in advance. This preliminary preparation ensures clean, regular edges during the transfer process without requiring complex real-time control mechanisms.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The invention replaces conventional mechanical transfer methods with ion-based processes. Instead of using mechanical contact and pressure for surface preparation, the method employs ion etching to create clean bonding surfaces and ion deposition to apply bonding materials. This substitution eliminates mechanical defects and produces superior edge quality.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

2Manufacturing precision

If multiple process steps are used to improve edge quality, then manufacturing precision improves, but production time increases

Engineering Contradiction:

Improveedge quality of transferred layerVSAvoidproduction time

Core Design Contradiction:

Manufacturing precisionVSLoss of time

Solution Approach 1:

The method merges multiple process steps into integrated sequences. The ion etching for surface preparation and the ion deposition for bonding material application are performed in succession within the same vacuum environment. The bonding step immediately follows the deposition without breaking vacuum, and the transfer operation follows directly after. This merging eliminates intermediate handling and reduces total production time while maintaining high precision.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The invention maintains continuous useful action by performing all critical steps—ion etching, ion deposition, bonding, and transfer—without rupturing the vacuum between operations. This continuity prevents recontamination of surfaces and eliminates time losses associated with vacuum chamber evacuation and re-establishment, thereby reducing production time while ensuring consistent edge quality.

Inventive Principle:

Principle #20Continuity of useful action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method achieves clean and regular edges of the transferred layer, reducing defects and enhancing the quality of subsequent microelectronic components.

Implementation Method 1

implementing an ion etching to form a step in front of a peripheral portion, not covered with the masking disk, of the bonding surface of the layer and/or of the destination substrate

Methodology Applied

Scientific EffectIon etching: Ion Beam

Implementation Method 2

activating the bonding surface of the layer and the bonding surface of the destination substrate by ion etching or ion deposition of a bonding material

Methodology Applied

Scientific EffectIon deposition: Physical Vapour Deposition

Data Source

PatentUS12424497B2Method for transferring a layer from a source substrate to a destination substrate

Publication Date: 2025.09.23 COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

AI summary

A method of transferring a layer from a source substrate to a destination substrate, including the following steps: a) arranging a masking disk on a central portion of a bonding surface of said layer and/or of the destination substrate b) implementing an ion etching to form a step in front of a peripheral portion, not covered with the masking disk, of the bonding surface of said layer and/or of the destination substrate c) removing the masking disk; d) activating the bonding surface of said layer and the bonding surface of the destination substrate; and e) placing into contact the bonding surface of said layer with the bonding surface of the destination substrate.