Layered Gas Injection Grid for Uniform Plasma Processing
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Plasma processing in semiconductor manufacturing often results in non-uniform treatment of workpieces, leading to device damage and a need for more delicate processing methods.
Innovation Solution
A grid assembly with vertically stacked layers and internal gas injection channels is used to uniformly distribute process gas, shielding it from RF power until mixed with plasma species, ensuring uniform gas distribution and avoiding device damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional plasma processing is used, then high density plasma and reactive species are generated for processing substrates, but non-uniform treatment of workpieces occurs leading to device damage
Solution Approach 1:
The grid assembly is divided into multiple vertically stacked layers (first layer, second layer, third layer, etc.) with progressively increasing numbers of gas injection channels. This segmentation allows gradual gas distribution from fewer channels at the top to many channels at the bottom, achieving uniform process gas delivery to the workpiece while preventing localized overheating and device damage.
Solution Approach 2:
Different layers of the grid assembly have different numbers of gas injection channels tailored to their specific positions. The first layer has fewer channels while lower layers have progressively more channels, creating local quality variations that optimize gas distribution uniformity across the workpiece surface and prevent harmful non-uniform plasma treatment.
2Manufacturing precision
If process gas is injected directly into the plasma chamber, then gas delivery is simple, but gas distribution uniformity across the workpiece is poor
Solution Approach 1:
The gas injection system transitions from a single-plane injection approach to a multi-layer vertical stacked arrangement. By adding the vertical dimension with multiple layers containing progressively increasing numbers of channels, the system achieves superior gas distribution uniformity across the workpiece while managing the complexity through a systematic layered structure.
Solution Approach 2:
The grid assembly employs a nested structure where multiple layers are stacked vertically, with each layer containing gas injection channels that are nested within the overall assembly structure. This nested arrangement allows systematic organization of numerous channels across multiple levels, achieving uniform gas distribution while maintaining structural coherence.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The grid assembly enhances workpiece uniformity and prevents damage by uniformly injecting process gas, facilitating more delicate plasma processing.
Implementation Method 1
a plurality of internal gas injection channels configured to deliver process gas from the gas inlet to the nozzles
Implementation Method 2
an inductively coupled plasma source configured to generate a plasma in the plasma chamber
Implementation Method 3
an inductively coupled plasma source configured to generate a plasma in the plasma chamber
Data Source
AI summary
A grid assembly for injecting process gas to a chamber. The grid assembly including a gas inlet for delivering the process gas to the grid assembly, a plurality of nozzles extending vertically through at least a portion of the grid assembly, and a plurality of layers in a vertical stacked arrangement. The plurality of layers including a top layer including one or more internal gas injection channels configured to receive process gas from the gas inlet, a bottom layer including a plurality of internal gas injection channels having one or more injection apertures configured to deliver the process gas about a horizontal plane to one or more of the plurality of nozzles, and one or more sublayers disposed between the top layer and the bottom layer, each of the one or more sublayers including an increasing number of internal gas injection channels as the one or more sublayers advance from the top layer to the bottom layer. Plasma processing apparatuses and method of processing workpiece are also provided.