Layered Interconnect Structures for Multi-Row Bond Pad Arrays
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Solution Overview
Problem
Conventional trench via fabrication methods are unable to produce high density interconnect structures over bond pad arrays containing three or more fine pitch bond pad rows, as they fail to effectively route interconnect lines between adjacent bond pads due to tight pitch and narrow pad-to-pad spacing.
Innovation Solution
The method involves forming layered interconnect structures by creating elongated trench vias to expose multiple bond pads, allowing for the formation of interconnect lines that contact bond pads at different metal levels, enabling direct electrical connections between bond pads and interconnect lines, even in tight pitch configurations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional trench via fabrication methods are used, then the process is simple and straightforward, but high density interconnect structures over multi-row fine pitch bond pads cannot be produced
Solution Approach 1:
The fabrication process is divided into multiple sequential stages: first forming initial trench vias to expose first bond pad rows, then depositing dielectric layers, and subsequently forming additional trench vias to expose second bond pad rows. This segmentation allows complex multi-row interconnect structures to be built systematically through repeated application of standardized process modules.
Solution Approach 2:
The patent transitions from planar interconnect routing to three-dimensional layered routing by forming trench vias at different depths and levels. Multiple dielectric layers are deposited between metal layers, creating vertical stacking that enables interconnect lines to reach middle bond pad rows without extending between adjacent bond pads in terminal rows.
2Quantity of substance
If bond pads are arranged in tight pitch configurations, then the contact array can be densely packed, but conventional methods fail to route interconnect lines between adjacent bond pads
Solution Approach 1:
By introducing vertical dimension through multiple dielectric layers and trench vias at different levels, the patent enables interconnect lines to access middle bond pad rows from above without requiring lateral routing between adjacent bond pads. This vertical access approach makes tight pitch configurations manufacturable.
Solution Approach 2:
Dielectric layers serve as intermediary structures that fill the space between metal layers and bond pads. These dielectric layers with embedded trench vias act as mediators that enable electrical connection to middle bond pad rows while maintaining isolation and supporting the tight pitch architecture.
3Reliability
If interconnect lines are routed to middle bond pad rows, then all bond pads can be connected, but conventional methods require extending lines between adjacent bond pads which is not feasible
Solution Approach 1:
The patent uses vertical stacking of dielectric and metal layers to create three-dimensional interconnect pathways. Trench vias penetrate through dielectric layers to establish vertical electrical connections to middle bond pad rows, eliminating the need for complex lateral routing between adjacent bond pads while ensuring complete electrical connectivity.
Data Source
AI summary
Microelectronic packages having layered interconnect structures are provided, as are methods for the fabrication thereof. In one embodiment, the method includes forming a first plurality of interconnect lines in ohmic contact with a first bond pad row provided on a semiconductor. A dielectric layer is deposited over the first plurality of interconnect lines, the first bond pad row, and a second bond pad row adjacent the first bond pad row. A trench via is then formed in the dielectric layer to expose at least the second bond pad row therethrough. A second plurality of interconnect lines is formed in ohmic contact with the second bond pad row within the trench via. The second plurality of interconnect lines extends over the first bond pad row and is electrically isolated therefrom by the dielectric layer to produce at least a portion of the layered interconnect structure.