Layered Crystalline Metal Oxide for High On-State Current
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high on-state current, miniaturization, high frequency characteristics, reliable electrical performance, and low power consumption, particularly in retaining data for long periods and reducing power consumption while maintaining high-speed data writing.
Innovation Solution
A crystalline metal oxide with a layered structure is used, comprising layers with different bandgaps where the carrier is transferred through the layer with a narrower bandgap, enhancing carrier mobility and reducing scattering, thereby improving on-state current and frequency characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a conventional semiconductor structure is used, then manufacturing is simpler, but on-state current is insufficient
Solution Approach 1:
The patent employs a composite metal oxide semiconductor structure consisting of a first metal oxide layer and a second metal oxide layer with different bandgaps. This composite structure enables higher on-state current by facilitating carrier transfer from the wider-bandgap first layer to the narrower-bandgap second layer, while maintaining manufacturing feasibility through sputtering deposition processes.
2Productivity
If device size is reduced for miniaturization, then integration density increases, but frequency characteristics deteriorate
Solution Approach 1:
The patent utilizes bandgap parameter differences between two metal oxide layers to achieve high-frequency characteristics in miniaturized devices. By selecting metal oxides with specific bandgap values (first layer: wider bandgap, second layer: narrower bandgap), the structure maintains high carrier mobility and frequency response even when device dimensions are reduced for higher integration density.
3Loss of energy
If power consumption is reduced, then energy efficiency improves, but data retention capability deteriorates
Solution Approach 1:
The patent applies local quality differentiation by assigning different bandgap characteristics to different layers: the first metal oxide layer with wider bandgap provides low leakage current for power savings, while the second metal oxide layer with narrower bandgap ensures adequate carrier transfer for data retention. This spatial differentiation of material properties resolves the contradiction between power consumption and data retention.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution results in semiconductor devices with increased on-state current, improved frequency characteristics, and reduced power consumption, enabling long-term data retention and high-speed data writing while maintaining reliability.
Implementation Method 1
In the case where a carrier is excited in the crystalline metal oxide, the carrier is transferred through the second layer
Implementation Method 2
The first layer has a wider bandgap than the second layer. In the case where a carrier is excited in the crystalline metal oxide, the carrier is transferred through the second layer
Data Source
AI summary
A novel metal oxide is provided. One embodiment of the present invention is a crystalline metal oxide. The metal oxide includes a first layer and a second layer; the first layer has a wider bandgap than the second layer; the first layer and the second layer form a crystal lattice; and in the case where a carrier is excited in the metal oxide, the carrier is transferred through the second layer. Furthermore, the first layer contains an element M (M is one or more selected from Al, Ga, Y, and Sn) and Zn, and the second layer contains In.