Layered Metal Oxide Semiconductor for High On-State Current
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high on-state current, frequency characteristics, reliability, and low power consumption, particularly in retaining data for long periods and enabling high-speed data writing, due to limitations in metal oxide semiconductor materials.
Innovation Solution
A metal oxide with a specific crystal structure is developed, comprising layers with octahedral and trigonal bipyramidal/tetrahedral structures, utilizing metals like indium, gallium, and zinc, which reduces cation disorder and enhances carrier mobility, thereby improving the electrical characteristics of semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If conventional metal oxide semiconductor materials are used, then device structure and manufacturing process are simple, but on-state current is insufficient and frequency characteristics are poor
Solution Approach 1:
The patent applies composite materials by creating a metal oxide semiconductor layer with a specific layered crystal structure containing multiple metal elements (e.g., In-Ga-Zn-O). This composite structure at the atomic level provides both high carrier mobility for improved on-state current and maintains manufacturability through established sputtering techniques.
Solution Approach 2:
The patent changes the crystal structure parameters by forming a specific layered arrangement with octahedral and trigonal bipyramidal/tetrahedral coordination geometries. This structural parameter change enables superior electrical characteristics including higher carrier mobility while still allowing conventional manufacturing processes to be used.
2Reliability
If conventional metal oxide semiconductor materials are used, then manufacturing process is simple, but frequency characteristics and reliability are insufficient
Solution Approach 1:
The multi-element metal oxide composite structure provides enhanced reliability and frequency characteristics through improved carrier mobility and reduced scattering, while the layered structure can be formed using modified conventional sputtering processes.
Solution Approach 2:
The patent implements local quality by creating distinct layers with specific metal element compositions and coordination geometries (octahedral vs. trigonal bipyramidal/tetrahedral) at different positions within the semiconductor layer, optimizing electrical properties locally while maintaining overall structural consistency.
3Power
If conventional metal oxide semiconductor materials are used, then power consumption is high, but achieving high on-state current requires complex device structures
Solution Approach 1:
By changing the fundamental material parameter (carrier mobility) through crystal structure optimization, the patent achieves high on-state current with simpler device structures. The high carrier mobility inherent in the layered metal oxide structure reduces the need for complex structural modifications to improve current flow.
Solution Approach 2:
The composite metal oxide material provides high on-state current through its intrinsic properties, eliminating the need for complex device structures such as multiple channels or advanced modulation schemes that would otherwise be required to achieve similar performance.
4Reliability
If data retention is improved through material optimization, then carrier mobility increases, but manufacturing precision requirements increase
Solution Approach 1:
The patent segments the crystal structure into distinct layers with specific coordination geometries (octahedral layers alternating with trigonal bipyramidal/tetrahedral layers). This segmentation allows each layer to be optimized independently while maintaining overall structural order, achieving high data retention without requiring extreme manufacturing precision.
Solution Approach 2:
By optimizing crystal structure parameters such as coordination geometry and layer stacking, the patent achieves improved data retention and carrier mobility while maintaining compatibility with conventional sputtering manufacturing processes that have established precision capabilities.
Data Source
AI summary
A novel metal oxide is provided. The metal oxide includes a crystal. The crystal has a structure in which a first layer, a second layer, and a third layer are stacked. The first layer, the second layer, and the third layer are each substantially parallel to a formation surface of the metal oxide. The first layer includes a first metal and oxygen. The second layer includes a second metal and oxygen. The third layer includes a third metal and oxygen. The first layer has an octahedral structure. The second layer has a trigonal bipyramidal structure or a tetrahedral structure. The third layer has a trigonal bipyramidal structure or a tetrahedral structure. The octahedral structure of the first layer includes an atom of the first metal at a center. The trigonal bipyramidal structure or the tetrahedral structure of the second layer includes an atom of the second metal at a center. The trigonal bipyramidal structure or the tetrahedral structure of the third layer includes an atom of the third metal at a center. The valence of the first metal is equal to the valence of the second metal. The valence of the first metal is different from the valence of the third metal.