Layered Crystalline Metal Oxide for High-Current Transistors
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Solution Overview
Problem
Existing semiconductor devices struggle to achieve high on-state current, high frequency characteristics, reliable operation, miniaturization, and efficient power consumption while maintaining favorable electrical characteristics.
Innovation Solution
A crystalline metal oxide with a layered structure, comprising a first layer with a wider bandgap and a second layer with a narrower bandgap, is used in transistors. This structure enhances carrier transfer and mobility, leading to improved electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional semiconductor structures are used, then device simplicity is maintained, but on-state current and frequency characteristics are insufficient
Solution Approach 1:
The patent employs a composite crystal structure consisting of a first crystal layer with wider bandgap and a second crystal layer with narrower bandgap. This composite structure enables high on-state current by facilitating efficient carrier transfer through the layered configuration, while the crystalline nature maintains structural integrity and device reliability.
Solution Approach 2:
The patent applies local quality by creating distinct regions with different bandgap characteristics within the semiconductor device. The first layer with wider bandgap and the second layer with narrower bandgap are positioned specifically to optimize carrier transfer pathways, enabling localized control of electrical properties to enhance overall device performance.
2Reliability
If conventional semiconductor materials are used, then manufacturing process simplicity is maintained, but frequency characteristics and power consumption efficiency are insufficient
Solution Approach 1:
The patent changes the fundamental parameter of bandgap width by utilizing materials with different bandgap characteristics. The first layer employs a material with wider bandgap while the second layer uses a material with narrower bandgap, creating optimal conditions for high-frequency operation and improved power efficiency without fundamentally altering the manufacturing process flow.
3Productivity
If conventional semiconductor devices are miniaturized, then integration density is improved, but maintaining favorable electrical characteristics becomes difficult
Solution Approach 1:
The composite crystal structure of wider bandgap and narrower bandgap layers maintains favorable electrical characteristics even in miniaturized devices. The layered configuration provides robust carrier transfer pathways that preserve device performance at smaller dimensions, enabling high integration density without sacrificing electrical reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of the crystalline metal oxide with a layered structure in semiconductor devices results in increased on-state current, improved frequency characteristics, enhanced reliability, and reduced power consumption, while allowing for miniaturization and high integration.
Implementation Method 1
In the case where a carrier is excited in the crystalline metal oxide, the carrier is transferred through the second layer
Data Source
AI summary
A novel metal oxide is provided. One embodiment of the present invention is a crystalline metal oxide. The metal oxide includes a first layer and a second layer; the first layer has a wider bandgap than the second layer; the first layer and the second layer form a crystal lattice; and in the case where a carrier is excited in the metal oxide, the carrier is transferred through the second layer. Furthermore, the first layer contains an element M (M is one or more selected from Al, Ga, Y, and Sn) and Zn, and the second layer contains In.