Layered Oxide Semiconductor Conductivity Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current oxide semiconductors primarily consist of n-type materials, limiting the development of p-type oxide semiconductors necessary for forming p-n junctions and other devices, as well as controlling conductivity in bipolar oxide semiconductors.
Innovation Solution
A layered oxide semiconductor structure expressed by the formula ∏i=1L[(AO)(ZO)mi(BO)ni]i is developed, where A, Z, and B are specific elements, allowing for controlled conductivity by adjusting the values of L, mi, and ni, enabling p-type or n-type conductivity through carrier induction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional oxide semiconductor materials are used, then n-type conductivity is achieved, but p-type conductivity cannot be obtained
Solution Approach 1:
The patent changes the chemical composition parameters of the oxide semiconductor by incorporating specific elements (Cu, Al, Ga, In for p-type; Zn, Sn for n-type) in controlled ratios. By adjusting the concentration of these elements and their oxidation states, the patent achieves transition between p-type and n-type conductivity, resolving the limitation of conventional materials that could only provide n-type conductivity.
Solution Approach 2:
The patent creates composite oxide semiconductor materials by combining multiple metal elements (Cu, Al, Ga, In, Zn, Sn) with oxygen in specific ratios. These composite materials exhibit tunable conductivity properties that neither single-element oxides could achieve alone, enabling both p-type and n-type conductivity in a unified material system.
2Adaptability or versatility
If p-type oxide semiconductors are developed, then bipolar devices can be formed, but material composition control becomes complex
Solution Approach 1:
The patent applies local quality by creating regions with different elemental compositions within the oxide semiconductor structure. By controlling the spatial distribution and concentration of specific elements (e.g., Cu-rich regions for p-type, Zn-rich regions for n-type), the patent enables formation of bipolar devices with distinct functional zones while maintaining overall compositional control through systematic ratios.
3Adaptability or versatility
If layered oxide structure is adopted, then conductivity control is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent segments the oxide semiconductor into a layered structure with alternating planes of different compositional characteristics. This segmentation into distinct layers with specific element distributions allows independent optimization of conductivity properties in each layer while simplifying the overall control mechanism through repetitive structural units.
Data Source
AI summary
An oxide semiconductor includes an oxide having a layered structure expressed by an expression of a product of [(AO)(ZO)mi(BO)(ZO)ni]i from i=1 to L. In the product, an atom A is a positive monovalent element, an atom Z is a positive divalent element, an atom B is a positive trivalent element, L is a positive integer, and mi and ni are independent integers greater than or equal to zero. A sum from i=1 to L of (mi+ni) is not zero.