Layered Metal Oxide-Silicon Oxide Spacers for Sub-100 Å Patterning
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in forming spacers with thicknesses less than 100 Angstroms due to mechanical weakness and insufficient etch selectivity of low temperature silicon oxide, leading to spacer collapse and loss of feature size and shape integrity.
Innovation Solution
A method involving layered film deposition cycles with alternating metal oxide and silicon oxide subcycles is employed to form patterning structures, which includes etching specific regions to create spacers with enhanced mechanical strength and etch selectivity, using precursors like aluminum, molybdenum, tungsten, or titanium for metal oxides and silicon-containing compounds.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If low temperature silicon oxide is used to form spacers, then deposition temperature is reduced, but mechanical strength and etch selectivity deteriorate causing spacer collapse
Solution Approach 1:
The patent forms composite layered films alternating between metal oxide and silicon oxide layers. The metal oxide layers (e.g., aluminum oxide, tungsten oxide, molybdenum oxide) provide enhanced mechanical strength and etch selectivity, while the silicon oxide layers maintain low deposition temperature compatibility. This composite structure resolves the contradiction by combining materials with complementary properties.
Solution Approach 2:
The spacer structure is segmented into multiple thin layers (metal oxide and silicon oxide alternating layers) rather than using a single homogeneous material. Each layer thickness is controlled to be between 1-10 nm, creating a fine-grained composite structure that provides both mechanical support and chemical stability while enabling low-temperature processing.
2Temperature
If low temperature silicon oxide is used to form spacers, then processing temperature is reduced, but etch selectivity deteriorates leading to loss of feature size and shape integrity
Solution Approach 1:
The alternating metal oxide and silicon oxide layers create a composite material with superior etch selectivity. The metal oxide layers exhibit different etch rates compared to silicon oxide layers, enabling precise control over feature geometry during etching processes while maintaining compatibility with low-temperature processing.
Solution Approach 2:
Different layers in the composite film have different local properties - metal oxide layers provide high etch selectivity and mechanical strength, while silicon oxide layers provide low-temperature deposition compatibility. This local differentiation of material properties allows the structure as a whole to achieve both low processing temperature and high manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method produces spacers with improved mechanical robustness and etch selectivity, suitable for advanced semiconductor applications, enabling features below 100 Angstroms while maintaining shape and size integrity.
Implementation Method 1
exposing the substrate to a metal-containing precursor and oxidizing metal-containing precursor adsorbed to the substrate
Implementation Method 2
oxidizing metal-containing precursor adsorbed to the substrate
Implementation Method 3
exposing a substrate to a silicon-containing precursor and oxidizing the silicon-containing precursor adsorbed to the substrate
Implementation Method 4
oxidizing the silicon-containing precursor adsorbed to the substrate
Data Source
AI summary
Examples are disclosed that relate to layered metal oxide films. One example provides a method of forming a patterning structure. The method comprises performing one or more layered film deposition cycles to form a layered film comprising a metal oxide. A layered film deposition cycle of the one or more layered deposition cycles comprises a metal oxide deposition subcycle and a silicon oxide deposition cycle. The metal oxide deposition subcycle comprises exposing the substrate to a metal-containing precursor and oxidizing metal-containing precursor adsorbed to the substrate. The silicon oxide deposition subcycle comprising exposing a substrate to a silicon-containing precursor and oxidizing silicon-containing precursor adsorbed to the substrate. The method further comprises etching one or more regions of the layered film to form the patterning structure.