Layered Semiconductor Imaging Element to Reduce Charge Trapping

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Solution Overview

Problem

Existing imaging elements face challenges in improving captured image quality due to difficulties in efficiently transferring and accumulating signal charges, leading to increased noise and reduced reading speed.

Innovation Solution

The imaging element incorporates a semiconductor layer with distinct first and second layers above the electrodes, differing in material composition, crystallinity, or impurity concentration, and is manufactured using physical vapor deposition and atomic layer deposition methods, enhancing carrier transport characteristics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a single-layer semiconductor structure is used, then the device structure is simple, but the carrier transport characteristic is insufficient leading to increased noise and reduced reading speed

Engineering Contradiction:

Improvecarrier transport characteristicVSAvoidsemiconductor layer structure

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The semiconductor layer is divided into two distinct layers: a first semiconductor layer formed by physical vapor deposition and a second semiconductor layer formed by atomic layer deposition. This segmentation allows each layer to contribute different functionalities - the first layer provides good interface characteristics while the second layer enhances carrier transport, thereby resolving the contradiction between structural simplicity and carrier transport performance.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent employs a composite semiconductor layer structure combining two different deposition methods (physical vapor deposition and atomic layer deposition) to create layers with complementary properties. This composite approach enables improved carrier transport characteristics and reduced charge trapping while maintaining manufacturing feasibility, thus resolving the contradiction between performance and complexity.

Inventive Principle:

Principle #40Composite materials

2Object-affected harmful factors

If conventional deposition methods are used, then the manufacturing process is simple, but the charge trapping occurs leading to increased noise

Engineering Contradiction:

Improvecharge trappingVSAvoiddeposition process

Core Design Contradiction:

Object-affected harmful factorsVSEase of manufacture

Solution Approach 1:

The patent changes the deposition parameters by employing two different deposition methods - physical vapor deposition for the first layer and atomic layer deposition for the second layer. This parameter change in the manufacturing process effectively reduces charge trapping and associated noise while maintaining reasonable manufacturing complexity, thus resolving the contradiction between reducing harmful factors and ease of manufacture.

Inventive Principle:

Principle #35Parameter changes

3Productivity

If the semiconductor layer is not optimized, then the manufacturing process is fast, but the reading speed is reduced due to poor carrier transport

Engineering Contradiction:

Improvereading speedVSAvoidsemiconductor layer configuration

Core Design Contradiction:

ProductivityVSDevice complexity

Solution Approach 1:

By segmenting the semiconductor layer into two functionally distinct layers deposited by different methods, the patent optimizes carrier transport characteristics without significantly complicating the manufacturing process. This segmentation enables faster reading speeds while maintaining a relatively streamlined production workflow, resolving the contradiction between productivity and device complexity.

Inventive Principle:

Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration improves image quality by reducing charge trapping and increasing the efficiency of charge transfer, thereby enhancing the imaging element's performance.

Implementation Method 1

forming the first layer using a physical vapor deposition method

Methodology Applied

Scientific EffectPhysical vapor deposition: Physical Vapour Deposition

Implementation Method 2

forming the second layer using an atomic layer deposition method

Methodology Applied

Scientific EffectAtomic layer deposition:

Data Source

PatentUS20250221142A1Imaging element and method of manufacturing imaging element, and light detection device

Publication Date: 2025.07.03 SONY SEMICON SOLUTIONS CORP

AI summary

An imaging element in one embodiment of the present disclosure includes a first electrode and a second electrode, a third electrode disposed opposed to the first electrode and the second electrode, a photoelectric conversion layer provided between the first electrode and the third electrode and between the second electrode and the third electrode, an insulating layer provided between the first electrode and the photoelectric conversion layer and between the second electrode and the photoelectric conversion layer and having an opening above the second electrode, a first layer provided between the photoelectric conversion layer and the insulating layer and formed at least above the first electrode, and a second layer formed at least above the second electrode while being electrically coupled to the second electrode via the opening and having a difference from the first layer in at least one of material composition, crystallinity, impurity concentration contained, or constituent element.