Full-Shot Layout Correction via Density Map Segmentation

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Solution Overview

Problem

The optical proximity effect (OPE) during the exposure process of semiconductor device manufacturing leads to inefficiencies in pattern transfer, necessitating time-consuming and costly optical proximity correction (OPC) methods.

Innovation Solution

A full-shot layout correction method that includes extracting a density map, blurring it to create a blurred density map, defining correction areas, separating cell and core patterns, performing OPC on these patterns hierarchically, and reconstructing the layout to improve efficiency and reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional OPC methods are applied to full-shot layouts, then optical proximity effects are corrected, but processing time and costs increase significantly

Engineering Contradiction:
Improvepattern transfer accuracyVSAvoidOPC processing time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent segments the full-shot layout into multiple sub-regions based on pattern density characteristics. By dividing the large layout into smaller manageable sections, the OPC processing is performed on each sub-region separately, significantly reducing the overall processing time while maintaining correction accuracy for each segment

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies different OPC processing strategies to different regions based on their local density characteristics. High-density regions receive different treatment compared to low-density regions, optimizing the correction process for each specific area's requirements rather than applying a uniform approach across the entire layout

Inventive Principle:
Principle #3Local quality

2Reliability

If conventional OPC methods are applied to full-shot layouts, then optical proximity effects are corrected, but manufacturing costs increase

Engineering Contradiction:
Improvepattern transfer accuracyVSAvoidmanufacturing cost
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent segments the full-shot layout into multiple sub-regions based on pattern density characteristics. By dividing the large layout into smaller manageable sections, the OPC processing is performed on each sub-region separately, significantly reducing the overall processing time while maintaining correction accuracy for each segment

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies different OPC processing strategies to different regions based on their local density characteristics. High-density regions receive different treatment compared to low-density regions, optimizing the correction process for each specific area's requirements rather than applying a uniform approach across the entire layout

Inventive Principle:
Principle #3Local quality

3Productivity

If density-based correction areas are defined and patterns are separated, then processing efficiency is improved, but process complexity increases

Engineering Contradiction:
ImproveOPC processing efficiencyVSAvoidcorrection process complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent performs preliminary actions by extracting density maps and defining correction areas before the actual OPC processing. This preparatory step organizes the layout data into density-based groups, which simplifies the subsequent OPC processing by pre-categorizing regions that require different levels or types of correction

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent introduces density maps as an intermediary representation between the original layout and the OPC processing. These density maps serve as a mediator that captures the spatial distribution of patterns, enabling the system to identify correction areas and guide the OPC process without directly manipulating the complex original layout data

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS20250208498A1Full-shot layout correction method and mask manufacturing method including the full-shot layout correction method
Publication Date: 2025.06.26 SAMSUNG ELECTRONICS CO LTD
  • US20250208498A1 patent drawing
  • US20250208498A1 patent drawing
  • US20250208498A1 patent drawing

AI summary

A full-shot layout correction method includes inputting data of a full-shot layout, extracting a density map from the full-shot layout, extracting a blurred density map by blurring the density map, defining a correction area based on the blurred density map, separating a cell pattern and a core pattern, which overlap the correction area, performing an optical proximity correction (OPC) on the cell pattern, and reconstructing a full-shot layout by using the cell pattern on which the OPC has been performed.