Layout Decomposition Using Partial Intensity Distribution
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Solution Overview
Problem
Current resolution enhancement techniques for photolithography, such as double dipole lithography, face challenges in decomposing layout design data due to the complexity of classifying features and considering neighboring effects, leading to difficulties in accurately reproducing images on substrates with shrinking feature sizes and increased component density.
Innovation Solution
The method involves decomposing layout design data based on partial intensity distribution information generated by optical simulations with X and Y dipole light sources, using image contrast and normalized image log slope data to assign features to horizontal or vertical layout portions, and adjusting these assignments during the OPC process to optimize feature exposure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If double dipole lithography is used to improve resolution, then image quality improves, but layout decomposition complexity increases
Solution Approach 1:
The layout is decomposed into multiple subsets, each optimized for specific dipole orientations. Features are segmented and assigned to different exposure groups based on their geometric characteristics and orientation, enabling systematic handling of complex layouts while maintaining high resolution.
Solution Approach 2:
The method varies exposure parameters including dipole orientation angles, exposure doses, and focus conditions across different layout subsets. By changing these parameters systematically, the process optimizes image quality for features with different orientations and densities.
2Quantity of substance
If feature size is reduced to increase component density, then circuit capacity improves, but image reproduction accuracy deteriorates
Solution Approach 1:
Different exposure parameters and dipole configurations are applied to different regions of the layout based on local feature characteristics. High-density regions receive optimized exposure conditions tailored to their specific geometric patterns, maintaining accuracy even as overall component density increases.
Solution Approach 2:
The system dynamically adjusts exposure parameters for different layout subsets rather than using fixed parameters. This allows the process to adapt to varying feature sizes and densities across different regions of the chip, maintaining precision as component density scales up.
3Manufacturing precision
If multiple dipole orientations are used to improve resolution, then feature definition improves, but process complexity increases
Solution Approach 1:
The exposure process is segmented into multiple sequential steps, each using a specific dipole orientation optimized for particular feature types. This segmentation allows complex multi-orientation exposure to be broken down into manageable, systematically applied steps.
Solution Approach 2:
Layout decomposition and feature classification are performed in advance before the actual exposure process. This preliminary action organizes features by orientation and characteristics, so that during exposure, the system simply applies pre-determined parameter sets rather than making complex decisions in real-time.
Data Source
AI summary
Layout design data are decomposed for double dipole lithography based on partial intensity distribution information. The partial intensity distribution information is generated by performing optical simulations on the layout design data. The layout decomposition may further be adjusted during an optical proximity correction process. The adjustment may utilize the partial intensity distribution information.