Layout Pattern Selective Amendment for Semiconductor Accuracy
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Solution Overview
Problem
Existing methods for transferring layout patterns in semiconductor manufacturing, such as photolithography, often result in deviations due to pattern characteristics, wafer topology, and process parameters, leading to inaccuracies in integrated circuit formation.
Innovation Solution
A method that classifies layout patterns into distinct groups, allowing for selective simulation and amendment procedures tailored to each group's specific attributes, enhancing the accuracy and speed of optical proximity correction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional optical proximity correction is applied to all layout patterns uniformly, then correction coverage is complete, but processing time and computational resources increase significantly
Solution Approach 1:
The patent segments layout patterns into multiple groups based on their characteristics (e.g., pitch, density, shape complexity). Different groups receive different correction treatments, allowing critical patterns to be corrected with high precision while less critical patterns use simplified correction methods, thereby reducing overall processing time while maintaining necessary accuracy.
Solution Approach 2:
The patent applies different correction qualities to different regions of the layout pattern. Critical areas that require high precision receive full optical proximity correction, while non-critical areas use simplified correction or no correction at all. This local differentiation optimizes the balance between accuracy and processing efficiency.
2Reliability
If uniform correction procedures are applied to all layout patterns, then consistency is maintained, but processing efficiency decreases
Solution Approach 1:
The patent divides layout patterns into groups based on their characteristics and applies different correction procedures to each group. This segmentation allows the system to maintain consistency within each group while improving overall processing efficiency by avoiding unnecessary uniform correction across all patterns.
Solution Approach 2:
The patent changes correction parameters (such as correction amount, algorithm complexity, or correction applied) based on the specific group characteristics. By adjusting these parameters dynamically according to pattern requirements, the system maintains reliability for critical patterns while enhancing productivity for less critical ones.
3Measurement precision
If detailed simulation and amendment procedures are performed on all layout pattern members, then correction accuracy is maximized, but computational complexity increases
Solution Approach 1:
The patent segments layout patterns into groups and applies different levels of simulation and amendment procedures to each group. Critical patterns receive detailed simulation and amendment to maximize accuracy, while less critical patterns use simplified procedures, thereby reducing overall computational complexity while maintaining necessary accuracy levels.
Solution Approach 2:
The patent applies partial correction action to certain pattern groups rather than exhaustive correction to all patterns. By performing detailed simulation and amendment only where necessary (partial action), the system achieves sufficient correction accuracy without the excessive computational complexity of applying full correction universally.
Data Source
AI summary
A method to selectively amend a layout pattern is disclosed. First, a layout pattern including at least a first group and a second group is provided, wherein each one of the first group and the second group respectively includes multiple members. Second, a simulation procedure and an amendment procedure are respectively performed on all the members of the first group and the second group to obtain an amended first group and an amended second group. Then, the amended first group and the amended second group are verified as being on target or not. Afterwards, the layout pattern including the on target amended first group and the on target amended second group is output.