LCD Fabrication via Imprinting to Reduce Mask Steps
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Solution Overview
Problem
The existing methods for fabricating LCD devices require multiple mask processes, which can lead to substrate pollution and deterioration of TFT characteristics, necessitating a reduction in the number of mask processes to maintain quality.
Innovation Solution
The proposed method employs an imprinting process to reduce the number of mask processes by forming depressions in the organic film and using these depressions as masks for etching, thereby minimizing the number of mask steps required in the fabrication of an IPS mode LCD device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If multiple mask processes are used to fabricate LCD devices, then the fabrication can be completed with standard photolithography methods, but substrate pollution occurs and TFT characteristics deteriorate
Solution Approach 1:
The patent segments the mask pattern formation into two distinct parts: (1) photolithography for forming the organic film pattern with initial masks, and (2) imprinting for forming the final precise patterns. This segmentation allows the harmful substrate pollution from multiple photolithography mask processes to be reduced, while still achieving the desired pattern fabrication capability.
Solution Approach 2:
The patent introduces an organic film as an intermediary layer that serves multiple functions: it acts as a mask for etching underlying layers, and its pattern is formed through a combination of photolithography and imprinting. This intermediary approach eliminates the need for multiple separate mask processes that would otherwise directly expose the substrate to pollution.
2Ease of manufacture
If multiple mask processes are used to fabricate LCD devices, then the fabrication can be completed with standard photolithography methods, but the number of mask steps increases leading to longer fabrication time
Solution Approach 1:
The patent merges the mask pattern formation process by combining photolithography (for forming the organic film) and imprinting (for forming precise patterns) into a single integrated workflow. This merging eliminates the need for multiple separate mask processes, thereby reducing fabrication time while maintaining manufacturing capability.
Solution Approach 2:
The patent performs preliminary action by forming the organic film pattern using photolithography before the imprinting process. This preliminary pattern formation serves as a foundation for the subsequent imprinting step, allowing the final precise patterns to be formed more efficiently without requiring multiple iterative mask processes.
3Ease of manufacture
If multiple mask processes are used to fabricate LCD devices, then the fabrication can be completed with standard photolithography methods, but the generation of poor patterns increases
Solution Approach 1:
The patent replaces the purely photolithographic mechanical system with a hybrid approach that incorporates imprinting technology. The imprinting process uses physical stamping or molding mechanisms to transfer patterns, which provides superior pattern precision and reduces the generation of poor patterns compared to repeated photolithography mask processes.
Data Source
AI summary
A method of fabricating an LCD device is discussed. The method in one embodiment includes: forming a gate electrode and a gate pad on a substrate, which is defined into a display area corresponding to pixel regions and a non-display area corresponding to pad regions, through a first mask process; sequentially stacking a gate insulation film, an amorphous silicon layer, an impurity-doped amorphous silicon layer and a metal film on the substrate provided with the gate electrode and then forming an active layer, source/drain electrode and a data line through a second mask process which uses one of half-tone and diffraction masks; and forming a transparent conductive material on the substrate provided with the source/drain electrode and forming a pixel electrode through a third mask process.