Liquid Crystal Display Static Electricity Protection Wiring
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
High-resolution liquid crystal display devices face challenges in preventing dielectric breakdown and TFT destruction due to static electricity, especially with limited space for static electricity protection circuits as the number of pixels increases, leading to reduced manufacturing yield and increased costs.
Innovation Solution
A configuration that forms static electricity protection lines without using diode circuits, utilizing a three-dimensional wiring structure with a wider a-Si film in the display area and no a-Si film outside the terminal area, coupled with an interlayer insulating film, to direct static electricity to earth, reducing the space and cost of the protection circuit.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If diode circuits are used to protect against static electricity, then reliability is improved, but device complexity and area increase
Solution Approach 1:
The patent extracts the static electricity protection function from the complex diode circuit and implements it through a simplified wiring structure. By removing the need for diode components and using only conductive lines with different a-Si film configurations, the protection function is maintained while circuit complexity is significantly reduced.
Solution Approach 2:
The patent replaces expensive and complex diode circuits with a simpler, more economical wiring structure using conductive lines and a-Si films. This simpler structure achieves the same protection function at lower cost and with reduced manufacturing complexity.
2Reliability
If diode circuits are used to protect against static electricity, then reliability is improved, but area occupied increases
Solution Approach 1:
The patent extracts the protection function from area-consuming diode circuits and implements it through compact wiring structures. The conductive lines with selective a-Si film removal achieve static electricity protection without requiring additional substrate area.
Solution Approach 2:
The patent uses the third dimension (film thickness and layer structure) to achieve protection functionality. By controlling the presence or absence of a-Si films in different regions and layers, protection is achieved without increasing the two-dimensional substrate area.
3Manufacturing precision
If a-Si film is formed below all lines, then manufacturing precision is improved, but productivity decreases due to extended process time
Solution Approach 1:
The patent applies different a-Si film configurations to different regions: a-Si films are formed below image signal lines in the display area for precision, while a-Si films are intentionally omitted below certain conductive lines outside the terminal area to reduce process time. This localized differentiation optimizes both precision and productivity.
Solution Approach 2:
Instead of forming a-Si films below all conductive lines uniformly, the patent applies a-Si films only where necessary (below image signal lines and some scan lines) while omitting them below other conductive lines. This partial application reduces manufacturing cycle time while maintaining sufficient protection where needed.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively prevents TFT and interlayer insulating film damage from static electricity, allowing for high-resolution, reliable display manufacturing at lower costs by eliminating the need for diode circuits and minimizing space requirements for static electricity protection.
Implementation Method 1
An a-Si film 400 is formed below an image signal line DL in the display area 500 and below a line formed in the same layer as the image signal line in a control area. The a-Si film provides a conductive path to direct static electricity to earth, preventing dielectric breakdown and TFT destruction.
Implementation Method 2
When large positive static electricity enters from the terminal 200, a diode 130 is turned on. When large negative static electricity enters, a diode 140 is turned on. This allows the static electricity to flow to earth, preventing destruction of the TFT in the display area 500, or preventing dielectric breakdown of an interlayer insulating film 300.
Data Source
AI summary
A method of manufacturing a liquid crystal display device having a substrate with a display area, a control area adjacent to the display area, and terminals. The method includes forming an interlayer insulating film and an a-Si film below an image signal line in the display area and below a line in the same layer as the image signal line in the control area, forming a scribing line outside the terminals, forming a ground line in the same layer as the scan line outside the scribing line, forming the interlayer insulating film outside the terminal, without forming the a-Si film on the interlayer insulating film, forming a static electricity protection line coupled to the terminal on the interlayer insulating film, the static electricity protection line being coupled to other static electricity protection lines outside the ground line, and, after the steps above, separating the substrate along the scribing line.