Liquid Crystal Display Thin Film Transistor Substrate Fabrication
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Solution Overview
Problem
The complexity of manufacturing processes for liquid crystal display panels, particularly the thin film transistor substrate, increases the manufacturing cost due to the need for multiple mask processes.
Innovation Solution
A liquid crystal display device and fabrication method that reduce the number of mask processes by using a three-step mask process to form a thin film transistor substrate with a gate line, gate insulating film, and source/drain metal pattern, where the semiconductor layer is removed from areas overlapping the transparent conductive layer, and the drain electrode protrudes to connect with the pixel electrode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple mask processes are used to form the thin film transistor substrate, then the manufacturing precision and reliability are improved, but the device complexity and manufacturing cost increase
Solution Approach 1:
The patent combines multiple mask processes into a single integrated mask process. The method forms the gate line, gate electrode, source/drain electrodes, and semiconductor layer pattern simultaneously in one masking step, eliminating the need for separate mask processes for each component. This merging approach maintains fabrication precision while significantly reducing process complexity and manufacturing cost.
Solution Approach 2:
The single mask process serves multiple functions: it defines the gate line, gate electrode, source/drain electrodes, and semiconductor layer pattern all in one operation. The mask pattern is designed to create all these structures simultaneously, making the masking process universal for forming multiple critical components of the thin film transistor substrate.
2Manufacturing precision
If multiple mask processes are used to form the thin film transistor substrate, then the manufacturing precision is improved, but the productivity decreases
Solution Approach 1:
By merging multiple sequential mask processes into a single integrated mask process, the patent eliminates the time required for multiple masking operations. The simultaneous formation of gate line, gate electrode, source/drain electrodes, and semiconductor layer pattern in one step significantly increases manufacturing efficiency while maintaining the required fabrication precision through carefully designed mask patterns.
3Manufacturing precision
If multiple mask processes are used to form the thin film transistor substrate, then the manufacturing precision is improved, but the manufacturing cost increases
Solution Approach 1:
The patent merges multiple mask processes into one, directly reducing the number of expensive masking steps required. This single integrated mask process forms all critical structures (gate line, gate electrode, source/drain electrodes, semiconductor layer pattern) simultaneously, eliminating redundant materials and equipment usage while maintaining manufacturing precision through optimized mask design.
Data Source
AI summary
A liquid crystal display device and a fabricating method thereof for simplifying a process are disclosed. A liquid crystal display device comprising first and second substrates; a gate line on the first substrate; a gate insulating film on the first substrate; a data line crossing the gate line to define a pixel area; a pixel hole in the pixel area; a pixel electrode formed of a transparent conductive layer on the gate insulating film in the pixel hole in the pixel area; and a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, wherein the semiconductor layer overlaps with a source/drain metal pattern including the data line, the source electrode, and the drain electrode; wherein the drain electrode protrudes from the semiconductor layer toward an upper portion of the pixel electrode, and the drain electrode connects to the pixel electrode; and wherein the semiconductor layer is removed from where it overlaps the transparent conductive layer.