LDMOS Field Oxide Segmentation for Lower On-Resistance
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Solution Overview
Problem
Conventional LDMOS semiconductor devices experience degradation in on-resistance characteristics, particularly at low operating voltages, due to electrons moving along a non-linear path under a single field oxide that is thicker than necessary, leading to increased on-resistance.
Innovation Solution
The semiconductor device incorporates a plurality of field oxides between the gate electrode and the drain in the low voltage region, with a single field oxide in the high voltage region, allowing for different densities and dimensions of field oxides for each voltage range, formed simultaneously using thermal oxidation, to reduce the carrier path length and prevent process efficiency degradation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single field oxide is used between gate electrode and drain, then the device structure is simple and manufacturing is easy, but the on-resistance deteriorates due to electrons moving along a non-linear path
Solution Approach 1:
The single field oxide is divided into multiple field oxides (first field oxide and second field oxide) positioned between the gate electrode and drain. This segmentation creates multiple oxidation regions that force electrons to move in a more linear path from source to drain, reducing on-resistance without significantly complicating the manufacturing process
Solution Approach 2:
Different field oxide regions are created with specific local characteristics - the first field oxide adjacent to the gate electrode and the second field oxide adjacent to the drain. Each region serves a specific function in controlling electron movement locally, improving overall device performance through localized optimization
2Reliability
If multiple field oxides are formed with different densities and dimensions for different voltage ranges, then on-resistance characteristics are improved, but process complexity increases
Solution Approach 1:
The patent combines the formation of multiple field oxides with different characteristics into a single integrated manufacturing process sequence. By merging these operations, the device achieves improved on-resistance characteristics without proportionally increasing process complexity, as the multiple field oxide regions are created through coordinated steps rather than separate sequential operations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration minimizes on-resistance degradation and maintains process efficiency by reducing the carrier path length between the drain and source, improving on-resistance characteristics at low operating voltages while maintaining breakdown voltage performance.
Implementation Method 1
The field oxide 960 is grown by thermal oxidation
Data Source
AI summary
Disclosed is a semiconductor device and a method of manufacturing the same and, more particularly, a semiconductor device and a method of manufacturing the same that improve specific on-resistance (Rsp) characteristics by forming or including a plurality of field oxides between an adjacent gate electrode and a drain to decrease the length of a path for flow of electrons between the drain and the source.