LDMOS Field Plate Contact for Breakdown Voltage and SOA
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Solution Overview
Problem
Current LDMOS device manufacturing processes face challenges in achieving a suitable combination of breakdown voltage, resistance spreading, and safe operating area performance due to increased handling and manufacturing costs associated with additional well implants, which also introduce defect risks.
Innovation Solution
The introduction of a field plate contact structure in the LDMOS device, configured with specific dimensions and doping concentrations, to reduce electron density and electric field strength near the drain contact, thereby improving high-voltage performance and Id-Vd tailing characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If additional well implants are used to improve breakdown voltage and safe operating area performance, then device performance is improved, but manufacturing cost increases and defect risks are introduced
Solution Approach 1:
The patent extracts the field plate function from the traditional well implant approach and implements it through a separate field plate contact structure formed after the drift region doping. This eliminates the need for additional well implant mask layers while achieving the desired electric field control and breakdown voltage enhancement, directly resolving the contradiction between performance improvement and manufacturing cost reduction.
2Reliability
If additional well implants are used to improve safe operating area performance, then device performance is improved, but manufacturing complexity increases
Solution Approach 1:
The patent separates the field plate function from the well implant process by introducing a dedicated field plate contact structure that is formed later in the manufacturing sequence. This extraction eliminates the need for additional implant mask layers, reducing manufacturing complexity while maintaining safe operating area performance through controlled electron density and electric field strength.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The field plate contact structure enhances breakdown voltage performance, reduces electron density, and improves Id-Vd tailing, leading to better high-voltage performance and reduced manufacturing costs by minimizing additional implant mask layers and defect risks.
Implementation Method 1
configured with specific dimensions and doping concentrations, to reduce electron density and electric field strength near the drain contact
Implementation Method 2
configured with specific dimensions and doping concentrations, to reduce electron density and electric field strength near the drain contact
Data Source
AI summary
An integrated circuit comprising an n-type drift region, a gate structure directly on a first portion of the n-type drift region, a drain structure formed in a second portion of the n-type drift region, the gate structure and the drain structure being separated by a drift region length, a resist protective oxide (RPO) formed over a portion of the n-type drift region between the gate structure and the drain structure, a field plate contact providing a direct electrical connection to the resist protective oxide.