Semiconductor Substrate Mask Integration for LDMOS Process
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Solution Overview
Problem
The manufacturing of semiconductor devices with LDMOS devices requires separate mask processes for forming isolated and non-isolated N-type and P-type devices, which significantly increases the manufacturing cost and complexity.
Innovation Solution
A method involving fewer mask processes, where a semiconductor substrate is prepared with distinct regions for each device type, and ion implantation and trench formation are performed using overlapping masks to create doped regions and isolation members, simplifying the process and reducing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If separate mask processes are used for forming isolated LDNMOS, non-isolated LDNMOS, and LDPMOS devices, then device structure precision is improved, but manufacturing cost and process complexity significantly increase
Solution Approach 1:
The patent combines multiple mask processes into a single integrated mask process. The mask structure includes a first mask layer with first and second patterns for forming isolated and non-isolated LDNMOS devices, and a second mask layer with a third pattern for forming LDPMOS devices. This allows all three device types to be formed simultaneously in one photolithography step, reducing process complexity while maintaining precise device formation
Solution Approach 2:
The mask structure serves multiple functions: it defines regions for isolated LDNMOS, non-isolated LDNMOS, and LDPMOS devices simultaneously. The first mask layer patterns serve dual purposes for both isolated and non-isolated device formation, while the second mask layer adds PMOS device definition. This multi-functional mask reduces the total number of separate mask processes required
2Manufacturing precision
If separate mask processes are used for forming isolated LDNMOS, non-isolated LDNMOS, and LDPMOS devices, then device isolation precision is improved, but manufacturing cost significantly increases
Solution Approach 1:
The patent merges multiple mask processes into one, where a single photolithography step forms all device regions. The mask structure uses a first mask layer with first and second patterns, and a second mask layer with a third pattern, allowing simultaneous definition of isolated LDNMOS, non-isolated LDNMOS, and LDPMOS devices. This reduces manufacturing cost by eliminating repeated mask alignment and processing steps while maintaining precise device isolation through the layered mask design
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly simplifies semiconductor device manufacturing and reduces costs by minimizing the number of required mask processes, while maintaining the necessary device structures and performance.
Implementation Method 1
performing first ion implantation through the three openings to form a first P-doped region in the first region, a second P-doped region in the second region, and a third P-doped region in the third region; performing second ion implantation through the three openings to form a first N-doped region in the first region, a second N-doped region in the second region, and a third N-doped region in the third region; performing third ion implantation through the three openings to form a fourth N-doped region in the first region, a fifth N-doped region in the second region, and a sixth N-doped region in the third region
Data Source
AI summary
A method for manufacturing a semiconductor device may include the following steps: preparing a semiconductor substrate that includes a first substrate region, a second substrate region, and a third substrate region; providing a first mask that overlaps the semiconductor substrate; etching, using the first mask, the first semiconductor substrate to form a trench in each of the substrate regions; providing a second mask that overlaps the semiconductor substrate and includes three openings corresponding to the substrate regions; performing first ion implantation through the three openings to form a P-doped region in each of the substrate regions; performing second ion implantation through the three openings to form an N-doped region in each of the substrate regions; and performing third ion implantation through the three openings to form another N-doped region in each of the substrate regions; and forming an isolation member in each of the trenches.