Lead Frame Gap Structure for High-Voltage Field Leakage Control

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Solution Overview

Problem

Electrical field leakage from semiconductor packages can lead to device failure, particularly as packages become smaller or include higher voltage semiconductor devices, where increased electric field leakage occurs.

Innovation Solution

The solution involves creating a gap between die attach pads with varying widths, where the first and second portions of the gap are wider than the intermediate portion, reducing metal density and thus minimizing electric field volume, and attaching semiconductor dies to these pads using a conductive or insulating adhesive.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If semiconductor packages are made smaller or higher voltage devices are included, then device integration and voltage capability are improved, but electric field leakage increases causing device failure

Engineering Contradiction:
Improvedevice integrationVSAvoidelectric field leakage
Core Design Contradiction:
ProductivityVSObject-affected harmful factors

Solution Approach 1:

The gap between die attach pads is segmented into multiple portions with different widths, creating zones of varying metal density that segment the electric field paths and prevent leakage

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different portions of the gap have different metal density characteristics - wider portions reduce electric field concentration while the intermediate portion maintains necessary electrical properties, creating local quality variations to control field distribution

Inventive Principle:
Principle #3Local quality

2Object-affected harmful factors

If metal density is reduced to minimize electric field volume, then electric field leakage is prevented, but die attach pad area is reduced

Engineering Contradiction:
Improveelectric field volumeVSAvoiddie attach pad area
Core Design Contradiction:
Object-affected harmful factorsVSArea of stationary object

Solution Approach 1:

The die attach pad structure is segmented into different metal density zones along the gap, allowing reduction of metal density in critical areas while preserving adequate pad area at attachment points

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Metal density is locally optimized - wider gap portions have reduced metal density to minimize electric field volume, while intermediate portions maintain higher density to preserve die attach functionality

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS11881445B2High voltage semiconductor device lead frame and method of fabrication
Publication Date: 2024.01.23 TEXAS INSTRUMENTS INC
  • US11881445B2 patent drawing
  • US11881445B2 patent drawing
  • US11881445B2 patent drawing

AI summary

An apparatus includes a first die attach pad and a second die attach pad. A first die is attached to the first die attach pad and a second die is attached to the second die attach pad. The first die attach pad and the second die attach pad are separated by a gap. A first edge of the first die attach pad adjacent to the gap is thinner than a second edge of the first die attach pad. The first edge of the first die attach pad is opposite the second edge of the first die attach pad. A first edge of the second die attach pad adjacent to the gap is thinner than a second edge of the second die attach pad. The first edge of the second die attach pad is opposite the second edge of the second die attach pad.