Semiconductor Lead Frame Groove for Wire Bonding Reliability
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Solution Overview
Problem
Conventional semiconductor devices experience wire breakage due to thermal expansion mismatch between the die bonding and wire bonding regions, despite the use of grooves to isolate these areas, as thermal expansion is still transmitted, leading to relative slip and wire breakage during mounting and temperature cycles.
Innovation Solution
A semiconductor device with a continuous groove encircling the island between the die bonding and wire bonding regions, isolating them and allowing individual thermal expansion, reducing displacement and slip at the wire bonding-resin interface, thereby preventing wire breakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a groove is formed between the die bonding region and wire bonding region, then thermal expansion of the wire bonding region is reduced, but thermal expansion from the die bonding region is still transmitted to the wire bonding region causing wire breakage
Solution Approach 1:
The island is divided into three distinct regions: a die bonding region, a wire bonding region, and an intermediate region positioned between them. This segmentation isolates the wire bonding region from direct thermal transmission from the die bonding region, while the intermediate region absorbs and buffers thermal expansion forces, preventing wire breakage during temperature cycles.
2Reliability
If the die bonding region and wire bonding region are isolated by a groove, then individual thermal expansion is possible, but relative slip at the wire bonding-resin interface still occurs causing wire breakage
Solution Approach 1:
The intermediate region acts as a mediator between the die bonding region and the wire bonding region. It buffers and absorbs thermal expansion forces, reducing the transmission of thermal shock to the wire bonding region and minimizing relative slip at the wire bonding-resin interface, thereby preventing wire breakage during temperature cycles.
3Reliability
If grooves or holes are formed between die bonding and wire bonding regions, then some thermal expansion isolation is achieved, but wire breakage still occurs due to remaining thermal transmission
Solution Approach 1:
The intermediate region is positioned specifically between the die bonding region and wire bonding region, creating a localized zone with different thermal and mechanical properties. This local modification provides targeted thermal management and stress buffering exactly where needed, protecting the wire bonding region without requiring complex global structural changes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The continuous groove effectively reduces thermal expansion transmission and displacement, reliably preventing wire breakage during thermal shocks and temperature cycles by allowing independent thermal expansion of the die and wire bonding regions, and minimizing slip at the resin interface.
Implementation Method 1
the die bonding region and the wire bonding region thermally expand individually independent of each other
Data Source
AI summary
A semiconductor device which can surely prevent a wire bonded to an island from breaking due to, for instance, thermal shock and temperature cycle upon mounting. The semiconductor device includes a semiconductor chip; an island die bonded with the semiconductor chip on the surface; and a wire for electrically connecting the electrode formed on the surface of the semiconductor chip with the island. The semiconductor device is further characterized in that the island has a die bonding region where the semiconductor chip is die bonded, a wire bonding region where the wire is wire bonded, and a continuous groove reaching a circumference of the island are formed between the die bonding region and the wire bonding region of the island.