Lead Frame Interconnection for Automotive Power Modules
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Solution Overview
Problem
Conventional power semiconductor modules for automotive use face challenges in achieving compactness, lightweight design, and long-term reliability at high operating temperatures due to the conventional metal-wire wiring scheme and silicone gel sealed structure, which increase the size and heat resistance issues.
Innovation Solution
A semiconductor device utilizing a lead frame interconnection with wider bonding portions compared to the interconnect portion, reducing stress concentration and enhancing reliability, combined with a resin case and a metal substrate, and using a thermosetting resin like epoxy for sealing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metal-wire wiring scheme is used, then electrical connection is achieved, but the size of the power semiconductor module increases
Solution Approach 1:
The patent replaces the conventional metal-wire wiring scheme with a lead frame interconnection system. The lead frame serves as both the mechanical support structure and the electrical interconnection medium, eliminating the need for separate wire bonding processes. This substitution reduces the overall module size while maintaining reliable electrical connections between the semiconductor chip and external terminals.
Solution Approach 2:
The lead frame performs multiple functions simultaneously: it provides mechanical support for the semiconductor chip, serves as an electrical interconnection pathway, and acts as a structural framework for the entire module. This multi-functionality consolidates several components into one, reducing the module's overall size and complexity.
2Reliability
If conventional silicone gel sealed structure is used, then sealing is achieved, but heat resistance becomes insufficient
Solution Approach 1:
The patent changes the material parameter of the sealing substance from conventional silicone gel to a thermosetting resin with superior heat resistance properties. This parameter change enables the sealing structure to withstand high operating temperatures in automotive applications while maintaining effective sealing performance.
Solution Approach 2:
The patent employs a composite sealing structure combining thermosetting resin with the lead frame interconnection system. The thermosetting resin provides both sealing and thermal management functions, creating a composite material solution that simultaneously addresses sealing requirements and heat resistance demands.
3Power
If multiple metal wires are used to provide necessary current, then current density is sufficient, but the wire bonding area increases
Solution Approach 1:
The patent replaces multiple individual wire connections with a single integrated lead frame interconnection system. The lead frame's conductive pathways provide sufficient current density while occupying minimal bonding area on the semiconductor chip, as the entire lead frame structure serves as the electrical interconnection medium.
Solution Approach 2:
The patent merges multiple wire bonding functions into a single lead frame structure. Instead of bonding multiple separate wires to the semiconductor chip, the lead frame is bonded as one integrated component, significantly reducing the total wire bonding area while maintaining all necessary electrical connections.
Data Source
AI summary
A semiconductor device including a stacked assembly. The stacked assembly includes a metal substrate, a stacked substrate mounted on the metal substrate and having an electrode pattern, a semiconductor element mounted on the stacked substrate, and a lead frame interconnection electrically connecting the semiconductor element and the electrode pattern. The lead frame interconnection includes a first bonding portion in contact with the semiconductor element, a second bonding portion in contact with the electrode pattern, and an interconnect portion connecting the first and second bonding portions. At least one of the first bonding portion and the second bonding portion is wider than the interconnect portion.