Lead Frame Configuration for Compact Semiconductor Devices

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Solution Overview

Problem

Conventional semiconductor devices face challenges in reducing size while maintaining dielectric strength and enabling large current flow, as they require multiple wires that increase bonding pad size and limit spacing between lead terminals.

Innovation Solution

The semiconductor device features a specific positional relationship between lead terminals, with larger spacings between lead groups and individual leads, allowing for a compact design with enhanced dielectric strength and efficient current flow, using a lead frame with a die pad and multiple leads connected to terminals on a semiconductor element.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If the number of wires is increased to handle large current, then the current carrying capacity is improved, but the size of bonding pads must be increased and the device size cannot be reduced

Engineering Contradiction:
Improvecurrent carrying capacityVSAvoiddevice size
Core Design Contradiction:
PowerVSVolume of moving object

Solution Approach 1:

The patent transitions from planar wire bonding to three-dimensional lead frame configuration. By using vertically extending leads with optimized spatial arrangement, the current carrying capacity is enhanced without increasing the bonding pad area on the semiconductor element, thus resolving the contradiction between power handling and device size.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The lead frame structure serves multiple functions simultaneously: it provides mechanical support, establishes electrical connections, and manages current distribution. The integrated lead frame with multiple leads replaces the need for multiple separate wires, achieving high current capacity while maintaining compact bonding pad dimensions.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Volume of moving object

If the spacing between lead terminals is reduced to decrease device size, then the device size is reduced, but the dielectric strength deteriorates

Engineering Contradiction:
Improvedevice sizeVSAvoiddielectric strength
Core Design Contradiction:
Volume of moving objectVSReliability

Solution Approach 1:

The patent applies different spacing requirements to different regions of the lead frame. Critical high-voltage terminals maintain larger spacing to ensure dielectric strength, while non-critical terminals can have reduced spacing. This localized quality approach allows overall device size reduction without compromising the dielectric strength where it is most needed.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The lead frame employs asymmetric spacing configuration where the spacing between leads is not uniform but optimized based on the electrical potential differences and current carrying requirements of each terminal pair. This asymmetric arrangement achieves compact overall dimensions while maintaining adequate dielectric clearance in critical areas.

Inventive Principle:
Principle #4Asymmetry

Data Source

PatentUS8575744B2Semiconductor device and lead frame thereof
Publication Date: 2013.11.05 PANASONIC HOLDINGS CORP
  • US8575744B2 patent drawing
  • US8575744B2 patent drawing
  • US8575744B2 patent drawing

AI summary

A semiconductor device includes a semiconductor element and a lead frame. The lead frame includes a first lead, a second lead, a third lead, a fourth lead, and a fifth lead placed parallel to one another. The first and second leads are placed adjoining to each other and constitute a first lead group, and the third and fourth leads are placed adjoining to each other and constitute a second lead group. The spacing between the first lead group and the fifth lead, the spacing between the second lead group and the fifth lead, and the spacing between the first lead group and the second lead group are larger than the spacing between the first lead and the second lead and the spacing between the third lead and the fourth lead.